Improved electrical properties of Ge metal-oxide-semiconductor devices with HfO2 gate dielectrics using an ultrathin GeSnOx film as the surface passivation layer

Applied Physics Letters ◽

10.1063/1.4800228 ◽

2013 ◽

Vol 102 (14) ◽

pp. 142906 ◽

Author(s):

Mei Zhao ◽

Renrong Liang ◽

Jing Wang ◽

Jun Xu

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Surface Passivation ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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Electrical properties of La2O3 and HfO2∕La2O3 gate dielectrics for germanium metal-oxide-semiconductor devices

Journal of Applied Physics ◽

10.1063/1.2827499 ◽

2008 ◽

Vol 103 (1) ◽

pp. 014506 ◽

Author(s):

G. Mavrou ◽

S. Galata ◽

P. Tsipas ◽

A. Sotiropoulos ◽

Y. Panayiotatos ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Influence of Ultra-Thin Ge3N4 Passivation Layer on Structural, Interfacial, and Electrical Properties of HfO2/Ge Metal-Oxide–Semiconductor Devices

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2020.16934 ◽

2020 ◽

Vol 20 (2) ◽

pp. 1039-1045

Author(s):

Kumar Mallem ◽

S. V. Jagadeesh Chandra ◽

Minkyu Ju ◽

Subhajith Dutta ◽

CH. V. V. Ramana ◽

...

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor

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Thermodynamic analysis of moisture absorption phenomena in high-permittivity oxides as gate dielectrics of advanced complementary-metal-oxide-semiconductor devices

Applied Physics Letters ◽

10.1063/1.3455110 ◽

2010 ◽

Vol 96 (24) ◽

pp. 242901 ◽

Author(s):

Yi Zhao ◽

Koji Kita ◽

Akira Toriumi

Keyword(s):

Metal Oxide ◽

Thermodynamic Analysis ◽

Moisture Absorption ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

High Permittivity

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Improved Electrical Properties and Reliability of GaAs Metal-Oxide-Semiconductor Capacitor by Using LaAlON Passivation Layer

physica status solidi (RRL) - Rapid Research Letters ◽

10.1002/pssr.201700180 ◽

2017 ◽

Vol 11 (9) ◽

pp. 1700180 ◽

Author(s):

Li Ning Liu ◽

Hoi Wai Choi ◽

Jing Ping Xu ◽

Pui To Lai

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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TiO2/HfO2 Bi-Layer Gate Stacks Grown by Atomic Layer Deposition for Germanium-Based Metal-Oxide-Semiconductor Devices Using GeOxNy Passivation Layer

Electrochemical and Solid-State Letters ◽

10.1149/1.3559770 ◽

2011 ◽

Vol 14 (5) ◽

pp. G27 ◽

Author(s):

Qi Xie ◽

Jan Musschoot ◽

Marc Schaekers ◽

Matty Caymax ◽

Annelies Delabie ◽

...

Keyword(s):

Atomic Layer Deposition ◽

Metal Oxide ◽

Semiconductor Devices ◽

Atomic Layer ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Gate Stacks ◽

Layer Deposition

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Effects of La content in ZrLaON gate dielectric on the interfacial and electrical properties of GaAs metal-oxide-semiconductor devices

Semiconductor Science and Technology ◽

10.1088/1361-6641/aafc65 ◽

2019 ◽

Vol 34 (3) ◽

pp. 035027 ◽

Author(s):

Lu Liu ◽

Hanhan Lu ◽

Jingping Xu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Gate Dielectric ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Interface engineering with an MOCVD grown ZnO interface passivation layer for ZrO2–GaAs metal–oxide–semiconductor devices

Solid State Communications ◽

10.1016/j.ssc.2011.09.033 ◽

2011 ◽

Vol 151 (24) ◽

pp. 1881-1884 ◽

Author(s):

Souvik Kundu ◽

T. Shripathi ◽

P. Banerji

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Interface Engineering ◽

Interface Passivation

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Electrical Properties of 4H-Silicon Carbide Complementary Metal–Oxide–Semiconductor Devices with Wet-Processed Gate Oxide

Japanese Journal of Applied Physics ◽

10.1143/jjap.48.04c087 ◽

2009 ◽

Vol 48 (4) ◽

pp. 04C087 ◽

Author(s):

Mitsuo Okamoto ◽

Tsutomu Yatsuo ◽

Kenji Fukuda ◽

Hajime Okumura

Keyword(s):

Silicon Carbide ◽

Electrical Properties ◽

Metal Oxide ◽

Semiconductor Devices ◽

Complementary Metal Oxide Semiconductor ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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Improved Interfacial and Electrical Properties of GaAs Metal–Oxide–Semiconductor Capacitor by Using Fluorine-Plasma-Treated Interfacial Passivation Layer

IEEE Transactions on Device and Materials Reliability ◽

10.1109/tdmr.2017.2702717 ◽

2017 ◽

Vol 17 (2) ◽

pp. 458-462 ◽

Author(s):

Han-Han Lu ◽

Jing-Ping Xu ◽

Lu Liu ◽

Pui-To Lai ◽

Wing-Man Tang

Keyword(s):

Electrical Properties ◽

Metal Oxide ◽

Metal Oxide Semiconductor ◽

Passivation Layer ◽

Oxide Semiconductor ◽

Metal Oxide Semiconductor Capacitor

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Positive bias temperature instability in p-type metal-oxide-semiconductor devices with HfSiON/SiO2 gate dielectrics

Journal of Applied Physics ◽

10.1063/1.4864416 ◽

2014 ◽

Vol 115 (7) ◽

pp. 074502 ◽

Author(s):

Piyas Samanta ◽

Heng-Sheng Huang ◽

Shuang-Yuan Chen ◽

Chuan-Hsi Liu ◽

Li-Wei Cheng

Keyword(s):

Metal Oxide ◽

Gate Dielectrics ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Positive Bias ◽

Temperature Instability ◽

Bias Temperature Instability ◽

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