Are dangling bond centers important interface traps in 4H-SiC metal oxide semiconductor field effect transistors?
Keyword(s):
2012 ◽
Vol 51
(2)
◽
pp. 02BC09
◽
Keyword(s):
2013 ◽
Vol 13
(4)
◽
pp. 456-462
◽
2002 ◽
Vol 41
(Part 1, No. 4B)
◽
pp. 2363-2366
◽
Keyword(s):
Keyword(s):
2012 ◽
Vol 51
(2S)
◽
pp. 02BC09
◽