Tunneling field effect transistor integrated with black phosphorus-MoS2 junction and ion gel dielectric

2017 ◽  
Vol 110 (3) ◽  
pp. 033103 ◽  
Author(s):  
Jiao Xu ◽  
Jingyuan Jia ◽  
Shen Lai ◽  
Jaehyuk Ju ◽  
Sungjoo Lee
Nano Letters ◽  
2016 ◽  
Vol 16 (2) ◽  
pp. 1293-1298 ◽  
Author(s):  
Pyo Jin Jeon ◽  
Young Tack Lee ◽  
June Yeong Lim ◽  
Jin Sung Kim ◽  
Do Kyung Hwang ◽  
...  

2018 ◽  
Vol 9 (1) ◽  
Author(s):  
Faisal Ahmed ◽  
Young Duck Kim ◽  
Zheng Yang ◽  
Pan He ◽  
Euyheon Hwang ◽  
...  

2017 ◽  
Vol 29 (24) ◽  
pp. 1700503 ◽  
Author(s):  
Wee Chong Tan ◽  
Yongqing Cai ◽  
Rui Jie Ng ◽  
Li Huang ◽  
Xuewei Feng ◽  
...  

Nanoscale ◽  
2017 ◽  
Vol 9 (30) ◽  
pp. 10741-10749 ◽  
Author(s):  
Guanjun Xiao ◽  
Ye Cao ◽  
Guangyu Qi ◽  
Lingrui Wang ◽  
Qingxin Zeng ◽  
...  

The high-pressure response of few-layer black phosphorus (BP) nanosheets remains elusive, despite the special interest in it particularly after the achievement of an exotic few-layer BP based field effect transistor.


Small ◽  
2016 ◽  
Vol 13 (5) ◽  
pp. 1602909 ◽  
Author(s):  
Amit Prakash ◽  
Yongqing Cai ◽  
Gang Zhang ◽  
Yong-Wei Zhang ◽  
Kah-Wee Ang

2019 ◽  
Vol 68 (9) ◽  
pp. 097301
Author(s):  
Hang Song ◽  
Jie Liu ◽  
Chao Chen ◽  
Long Ba

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