High performance thin film transistor (flex-TFT) with textured nanostructure ZnO film channel fabricated by exploiting electric double layer gate insulator

2017 ◽  
Vol 110 (5) ◽  
pp. 052105 ◽  
Author(s):  
Rishi Ram Ghimire ◽  
A. K. Raychaudhuri
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Electric Double Layer ◽  
High Performance ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Zno Film

Bias Stress Stability of Electric-double-layer ZnO Thin-film Transistor

2022 ◽  
Vol 43 (01) ◽  
pp. 129-136
Author(s):  
Cong WANG ◽  
◽  
Yu-rong LIU ◽  
Qiang PENG ◽  
He HUANG ◽  
...  
Keyword(s):  
Thin Film ◽  
Double Layer ◽  
Electric Double Layer ◽  
Thin Film Transistor ◽  
Zno Thin Film ◽  
Bias Stress

Transient security transistors self-supported on biodegradable natural-polymer membranes for brain-inspired neuromorphic applications

Nanoscale ◽  
2018 ◽  
Vol 10 (31) ◽  
pp. 14893-14901 ◽  
Author(s):  
Wennan Hu ◽  
Jie Jiang ◽  
Dingdong Xie ◽  
Shitan Wang ◽  
Kaixi Bi ◽  
...  
Keyword(s):  
Thin Film ◽  
Sodium Alginate ◽  
Double Layer ◽  
Electric Double Layer ◽  
Thin Film Transistor ◽  
Electronic Devices ◽  
Polymer Membranes ◽  
Natural Polymer ◽  
Layer Thin Film

Physically transient neuromorphic electronic devices are proposed using an AZO electric-double-layer thin-film transistor self-supported on biodegradable sodium alginate membranes.

A High-Voltage Hydrogenated Amorphous Silicon Thin-Film Transistor for Reflective Active-Matrix Cholesteric LCD

1999 ◽  
Vol 558 ◽  
Author(s):  
J.Y. Nahm ◽  
J.H. Lan ◽  
J. Kanicki
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Double Layer ◽  
High Voltage ◽  
Thin Film Transistor ◽  
Hydrogenated Amorphous Silicon ◽  
Gate Insulator ◽  
Silicon Thin Film ◽  
Active Matrix ◽  
Hydrogenated Amorphous

ABSTRACTA high-voltage hydrogenated amorphous silicon thin film transistor (H-V a-Si:H TFT) with thick double layer gate insulator (∼0.95 μm) has been developed for reflective active-matrix cholesteric liquid crystal displays. The double layer gate insulator consists of 0.85 and 0.10 μm thick benzocyclobutene and hydrogenated amorphous silicon nitride, respectively. This HV a-Si:H TFT operates at the gate-tosource and drain-to-source biases up to 100V without any serious leakage current degradation and device breakdown.

Effects of N2 Plasma Treatment on SiO2 Gate Insulator in a-Si:H Thin Film Transistor

1994 ◽  
Vol 345 ◽  
Author(s):  
Sung Chul Kim ◽  
Sung Sig Bae ◽  
Eui Yeol Oh ◽  
Jeong Hyun Kim ◽  
Jong Wan Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
High Performance ◽  
Thin Film Transistor ◽  
Interface Layer ◽  
Experimental Results ◽  
Gate Insulator ◽  
Interface Region ◽  
Sequential Deposition ◽  
N2 Plasma

AbstractWe fabricated the high performance a-Si:H TFT using the N2 plasma treated APCVD SiO2 as a gate insulator. The effects of N2 plasma treatment on the APCVD SiO2 were investigated by XPS and SIMS measurements. And the formation of the oxynitride interface layer between a-Si:H and APCVD SiO2 was found in the a-Si:H TFT. From our experimental results, It may be concluded that most nitrogen atoms, which were incorporated by the exposure of SiO2 layer to N2 plasma, exist, not bonded to other atoms, near the surface of the SiO2 layer and during the sequential deposition of a-Si:H on the N2 plasma treated APCVD SiO2 layer Si-N bonds are formed, resulting in the oxynitride layer in the interface region. This explains the high performance a-Si:H TFT with the N2 plasma treated APCVD SiO2 gate insulator.

High performance ferroelectric ZnO thin film transistor using AlOx/HfZrO/ZrOx gate insulator by spray pyrolysis

2021 ◽  
Vol 119 (9) ◽  
pp. 093502
Author(s):  
Md Mehedi Hasan ◽  
Mohit ◽  
Jinbaek Bae ◽  
Eisuke Tokumitsu ◽  
Hye-Yong Chu ◽  
...  
Keyword(s):  
Thin Film ◽  
Spray Pyrolysis ◽  
High Performance ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Zno Thin Film

Effects of N2 Plasma Treatment on SiO2 Gate Insulator in a-Si:H Thin Film Transistor

1994 ◽  
Vol 336 ◽  
Author(s):  
Sung Chul Kim ◽  
Sung Sig Bae ◽  
Eui Yeol Oh ◽  
Jeong Hyun Kim ◽  
Jong Wan Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
High Performance ◽  
Thin Film Transistor ◽  
Interface Layer ◽  
Experimental Results ◽  
Gate Insulator ◽  
Interface Region ◽  
Sequential Deposition ◽  
N2 Plasma

ABSTRACTWe fabricated the high performance a-Si:H TFT using the N2 plasma treated APCVD SiO2 as a gate insulator. The effects of N2 plasma treatment on the APCVD SiO2 were investigated by XPS and SIMS Measurements. And the formation of the oxynitride interface layer between a-Si:H and APCVD SiO2 was found in the a-Si:H TFT. From our experimental results, It May be concluded that most nitrogen atoms, which were incorporated by the exposure of SiO2 layer to N2 plasma, exist, not bonded to other atoms, near the surface of the SiO2 layer and during the sequential deposition of a-Si:H on the N2 plasma treated APCVD SiO2 layer Si-N bonds are formed, resulting in the oxynitride layer in the interface region. This explains the high performance a-Si:H TFT with the N2 plasma treated APCVD SiO2 gate insulator.

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