High performance low temperature polysilicon thin film transistor using ECR plasma thermal oxide as gate insulator

1994 ◽  
Vol 15 (8) ◽  
pp. 301-303 ◽  
Author(s):  
Jung-Yeal Lee ◽  
Chul-Hi Han ◽  
Choong-Ki Kim
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
High Performance ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Ecr Plasma ◽  
Thermal Oxide

High Performance Amorphous In–Ga–Zn–O Thin-Film Transistors with Low Temperature High-k Solution Processed Hybrid Gate Insulator

2020 ◽  
Vol 9 (2) ◽  
pp. 025002
Author(s):  
Ployrung Kesorn ◽  
Juan Paolo Bermundo ◽  
Toshiaki Nonaka ◽  
Mami N. Fujii ◽  
Yasuaki Ishikawa ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistors ◽  
High Performance ◽  
Gate Insulator ◽  
Solution Processed ◽  
High K

Effects of N2 Plasma Treatment on SiO2 Gate Insulator in a-Si:H Thin Film Transistor

1994 ◽  
Vol 345 ◽  
Author(s):  
Sung Chul Kim ◽  
Sung Sig Bae ◽  
Eui Yeol Oh ◽  
Jeong Hyun Kim ◽  
Jong Wan Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
High Performance ◽  
Thin Film Transistor ◽  
Interface Layer ◽  
Experimental Results ◽  
Gate Insulator ◽  
Interface Region ◽  
Sequential Deposition ◽  
N2 Plasma

AbstractWe fabricated the high performance a-Si:H TFT using the N2 plasma treated APCVD SiO2 as a gate insulator. The effects of N2 plasma treatment on the APCVD SiO2 were investigated by XPS and SIMS measurements. And the formation of the oxynitride interface layer between a-Si:H and APCVD SiO2 was found in the a-Si:H TFT. From our experimental results, It may be concluded that most nitrogen atoms, which were incorporated by the exposure of SiO2 layer to N2 plasma, exist, not bonded to other atoms, near the surface of the SiO2 layer and during the sequential deposition of a-Si:H on the N2 plasma treated APCVD SiO2 layer Si-N bonds are formed, resulting in the oxynitride layer in the interface region. This explains the high performance a-Si:H TFT with the N2 plasma treated APCVD SiO2 gate insulator.

High-performance polysilicon air-gap thin film transistor on low-temperature substrates

2003 ◽  
Author(s):  
Hicham Mahfoz-Kotb ◽  
Anne-Claire Salaun ◽  
Tayeb Mohammed-Brahim ◽  
Nathalie Coulon ◽  
Olivier Bonnaud ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
High Performance ◽  
Thin Film Transistor ◽  
Air Gap

High Performance p-type SnO thin-film Transistor with SiOxGate Insulator Deposited by Low-Temperature PECVD Method

2014 ◽  
Vol 14 (5) ◽  
pp. 666-672 ◽  
Author(s):  
Myeonghun U ◽  
Young-Joon Han ◽  
Sang-Hun Song ◽  
In-Tak Cho ◽  
Jong-Ho Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
High Performance ◽  
Thin Film Transistor ◽  
P Type

Stacked gate insulator of photooxide and PECVD film from SiH4 and N2O for low-temperature poly-Si thin-film transistor

2003 ◽  
Vol 86 (11) ◽  
pp. 21-28
Author(s):  
Yukihiko Nakata ◽  
Tetsuya Okamoto ◽  
Takashi Itoga ◽  
Toshimasa Hamada ◽  
Yutaka Ishii
Keyword(s):  
Thin Film ◽  
Low Temperature ◽  
Thin Film Transistor ◽  
Gate Insulator ◽  
Si Thin Film
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