High performance ferroelectric ZnO thin film transistor using AlOx/HfZrO/ZrOx gate insulator by spray pyrolysis

AbstractWe fabricated the high performance a-Si:H TFT using the N2 plasma treated APCVD SiO2 as a gate insulator. The effects of N2 plasma treatment on the APCVD SiO2 were investigated by XPS and SIMS measurements. And the formation of the oxynitride interface layer between a-Si:H and APCVD SiO2 was found in the a-Si:H TFT. From our experimental results, It may be concluded that most nitrogen atoms, which were incorporated by the exposure of SiO2 layer to N2 plasma, exist, not bonded to other atoms, near the surface of the SiO2 layer and during the sequential deposition of a-Si:H on the N2 plasma treated APCVD SiO2 layer Si-N bonds are formed, resulting in the oxynitride layer in the interface region. This explains the high performance a-Si:H TFT with the N2 plasma treated APCVD SiO2 gate insulator.

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A high-temperature resistant polyimide gate insulator surface-modified with a YOx interlayer for high-performance, solution-processed Li-doped ZnO thin-film transistors

Journal of Materials Chemistry C ◽

10.1039/c3tc31890g ◽

2014 ◽

Vol 2 (12) ◽

pp. 2191 ◽

Cited By ~ 18

Author(s):

Jun-Young Yoon ◽

Yun Ho Kim ◽

Jae-Won Ka ◽

Sung-Kwon Hong ◽

Mi Hye Yi ◽

...

Keyword(s):

Thin Film ◽

High Temperature ◽

Thin Film Transistors ◽

High Performance ◽

Gate Insulator ◽

Zno Thin Film ◽

Solution Processed ◽

Insulator Surface ◽

Doped Zno ◽

Surface Modified

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High performance low temperature polysilicon thin film transistor using ECR plasma thermal oxide as gate insulator

IEEE Electron Device Letters ◽

10.1109/55.296223 ◽

1994 ◽

Vol 15 (8) ◽

pp. 301-303 ◽

Cited By ~ 17

Author(s):

Jung-Yeal Lee ◽

Chul-Hi Han ◽

Choong-Ki Kim

Keyword(s):

Thin Film ◽

Low Temperature ◽

High Performance ◽

Thin Film Transistor ◽

Gate Insulator ◽

Ecr Plasma ◽

Thermal Oxide

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Effects of N2 Plasma Treatment on SiO2 Gate Insulator in a-Si:H Thin Film Transistor

MRS Proceedings ◽

10.1557/proc-336-775 ◽

1994 ◽

Vol 336 ◽

Cited By ~ 1

Author(s):

Sung Chul Kim ◽

Sung Sig Bae ◽

Eui Yeol Oh ◽

Jeong Hyun Kim ◽

Jong Wan Lee ◽

...

Keyword(s):

Thin Film ◽

Plasma Treatment ◽

High Performance ◽

Thin Film Transistor ◽

Interface Layer ◽

Experimental Results ◽

Gate Insulator ◽

Interface Region ◽

Sequential Deposition ◽

N2 Plasma

ABSTRACTWe fabricated the high performance a-Si:H TFT using the N2 plasma treated APCVD SiO2 as a gate insulator. The effects of N2 plasma treatment on the APCVD SiO2 were investigated by XPS and SIMS Measurements. And the formation of the oxynitride interface layer between a-Si:H and APCVD SiO2 was found in the a-Si:H TFT. From our experimental results, It May be concluded that most nitrogen atoms, which were incorporated by the exposure of SiO2 layer to N2 plasma, exist, not bonded to other atoms, near the surface of the SiO2 layer and during the sequential deposition of a-Si:H on the N2 plasma treated APCVD SiO2 layer Si-N bonds are formed, resulting in the oxynitride layer in the interface region. This explains the high performance a-Si:H TFT with the N2 plasma treated APCVD SiO2 gate insulator.

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