Bulk transport properties of bismuth selenide thin films grown by magnetron sputtering approaching the two-dimensional limit

Underdoped electron-doped La 2-x Ce x CuO 4 ( x =0.06-0.09) thin films were successfully grown and investigated for the transport properties in ab-plane. It was found that the in-plane resistivity ρab shows a semiconductor behavior when x =0.06, with increasing the Ce concentration to the optimal doping level, it changes to the two dimensional Fermi-liquid behavior. In the films with x≥0.08, a Kondo effect like scattering is observed in the low temperature range.

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Transport Properties of High Tc Y-Ba-Cu-O Thin Films Made by RF Magnetron Sputtering

Advances in Superconductivity ◽

10.1007/978-4-431-68084-0_97 ◽

1989 ◽

pp. 575-580 ◽

Cited By ~ 1

Author(s):

Jon-Chi Chang ◽

Satoru Seo ◽

Akira Sayama ◽

Masakazu Matsui ◽

Kiyoshi Yamamoto ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Transport Properties ◽

Rf Magnetron Sputtering ◽

High Tc

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Fabrication of thin films of two-dimensional triangular antiferromagnet Ag2CrO2 and their transport properties

AIP Advances ◽

10.1063/1.5016428 ◽

2018 ◽

Vol 8 (2) ◽

pp. 025010 ◽

Cited By ~ 3

Author(s):

Hiroki Taniguchi ◽

Shota Suzuki ◽

Tomonori Arakawa ◽

Hiroyuki Yoshida ◽

Yasuhiro Niimi ◽

...

Keyword(s):

Thin Films ◽

Transport Properties ◽

Two Dimensional

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Thermoelectric and Transport Properties of Delafossite CuCrO2:Mg Thin Films Prepared by RF Magnetron Sputtering

Nanomaterials ◽

10.3390/nano7070157 ◽

2017 ◽

Vol 7 (7) ◽

pp. 157 ◽

Cited By ~ 22

Author(s):

Inthuga Sinnarasa ◽

Yohann Thimont ◽

Lionel Presmanes ◽

Philippe Tailhades ◽

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Transport Properties ◽

Rf Magnetron Sputtering

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Electrical transport properties of V2O5 thin films obtained by thermal annealing of layers grown by RF magnetron sputtering at room temperature

Thin Solid Films ◽

10.1016/j.tsf.2015.06.048 ◽

2015 ◽

Vol 589 ◽

pp. 730-734 ◽

Cited By ~ 16

Author(s):

H.M.R. Giannetta ◽

C. Calaza ◽

D.G. Lamas ◽

L. Fonseca ◽

L. Fraigi

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Transport Properties ◽

Thermal Annealing ◽

Electrical Transport ◽

Room Temperature ◽

Rf Magnetron Sputtering ◽

Electrical Transport Properties ◽

V2o5 Thin Films

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Transport properties of Bi2Se3 thin films grown by magnetron sputtering

Functional Materials Letters ◽

10.1142/s1793604715500204 ◽

2015 ◽

Vol 08 (02) ◽

pp. 1550020 ◽

Cited By ~ 5

Author(s):

Z. T. Wei ◽

M. Zhang ◽

Y. Yan ◽

X. Kan ◽

Z. Yu ◽

...

Keyword(s):

Thin Films ◽

Magnetron Sputtering ◽

Transport Properties ◽

Electrical Transport ◽

Annealing Treatment ◽

Atomic Ratio ◽

Weak Antilocalization ◽

Electrical Transport Properties ◽

Sputtering Deposition ◽

Post Annealing

Epitaxial growth of Bi 2 Se 3 thin films is of great current interest due to the advantages in spintronics and thermoelectrical applications. In this paper, Bi 2 Se 3 thin films on Si (111) substrate have been prepared via magnetron sputtering deposition with post-annealing treatment and their microstructures and electrical transport properties were studied. Good quality with highly c-axis oriented films could be obtained after post-annealing treatment. The annealing temperature (T a ) obviously affected the phase structures and electrical properties. The crystallinity and the lattice parameters c of the Bi 2 Se 3 thin-films increased with increasing T a . The relative atomic ratio of Se / Bi decreased with increasing T a and large number of Se vacancies was discovered in films with T a = 350° C . The resistivity of films decreased monotonously and showed weakly metallic resistivity with the increase of T a . Non-saturated high-field linear magnetoresistance and weak antilocalization were found in films with higher T a .

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