scholarly journals Creation and annealing of metastable defect states in CH3NH3PbI3 at low temperatures

2018 ◽  
Vol 112 (8) ◽  
pp. 081102 ◽  
Author(s):  
F. Lang ◽  
O. Shargaieva ◽  
V. V. Brus ◽  
J. Rappich ◽  
N. H. Nickel
Keyword(s):  
Low Temperatures ◽  
Defect States ◽  
Metastable Defect

Metastable defect states in hydrogen-implanted silicon

1983 ◽  
Vol 71 (1-2) ◽  
pp. 1-8 ◽  
Author(s):  
Yu. V. Gorelkinskii ◽  
N. N. Nevinnyi
Keyword(s):  
Defect States ◽  
Metastable Defect

The Staebler-Wronski Effect: New Physical Approaches and Insights as a Route to Reveal its Origin

2010 ◽  
Vol 1245 ◽  
Author(s):  
Arno H.M. Smets ◽  
Chris R. Wronski ◽  
Miro Zeman ◽  
M. van de Sanden
Keyword(s):  
Experimental Evidence ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Defect States ◽  
Staebler Wronski Effect ◽  
Hydrogenated Amorphous ◽  
Metastable Defect ◽  
Hydrogen Bonded

AbstractIn the recent years more and more theoretical and experimental evidence have been found that the hydrogen bonded to silicon in dense hydrogenated amorphous silicon (a-Si:H) predominantly resides in hydrogenated divacancies. In this contribution we will philosophize about the option that the small fraction of divacancies, missing at least one of its bonded hydrogen, may correspond to some of the native and metastable defect states of a-Si:H. We will discuss that such defect entities are an interesting basis for new and alternative views on the origin of the SWE.

Thermal Equilibrium, Metastable and Irreversible Defects in a-Si:H

1989 ◽  
Vol 149 ◽  
Author(s):  
R. A Street ◽  
K. Winer
Keyword(s):  
Relaxation Time ◽  
Low Temperature ◽  
Temperature Dependence ◽  
Thermodynamic Model ◽  
Thermal Equilibrium ◽  
Defect Density ◽  
Defect States ◽  
Different Types ◽  
Metastable Defect ◽  
Deposition Conditions

ABSTRACTMeasurements are reported of metastable defect states in undoped a-Si: H, with the aim of understanding the relation between the different types of metastability. The temperature dependence of the thermal equilibrium defect density agrees well with a proposed thermodynamic model and their relaxation time varies with deposition conditions. The rate of light induced defect creation and annealing in samples deposited at low temperature and with a large initial defect density, decreases progressively as the irreversible defects are removed by annealing.

Photocurrent Response In Mg-Doped GaN

1997 ◽  
Vol 482 ◽  
Author(s):  
C. H. Qiu ◽  
J. I Pankove ◽  
I. Akasaki ◽  
H. Amano
Keyword(s):  
Thin Films ◽  
Time Domain ◽  
Low Temperatures ◽  
Room Temperature ◽  
Photocurrent Response ◽  
Defect States ◽  
Maximum Value ◽  
The Time Domain ◽  
Photoconductivity Response ◽  
Mg Doped

AbstractThe photoconductivity response of Mg-doped GaN thin films was studied in the time domain of 50 nanoseconds to a few milliseconds in the temperature range of 100K to 390K. The response time, defined as the time when the photocurrent decreased to half its maximum value, is in the sub-microseconds at room temperature, but increased to a few microseconds at low temperatures. The contact capacitance is suspected for this behavior. Slower decay components due to trapping at defect states were also observed.

Metastable defect states and equilibration temperatures in a-SiNx:H, a-SiOx:H and a-SiCx:H

1991 ◽  
Vol 137-138 ◽  
pp. 287-290 ◽  
Author(s):  
A. Hamed ◽  
H. Fritzsche ◽  
X.-M. Deng ◽  
S. Köhler ◽  
R. Gupta
Keyword(s):  
Defect States ◽  
Metastable Defect
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