Thermal Equilibrium, Metastable and Irreversible Defects in a-Si:H
Keyword(s):
ABSTRACTMeasurements are reported of metastable defect states in undoped a-Si: H, with the aim of understanding the relation between the different types of metastability. The temperature dependence of the thermal equilibrium defect density agrees well with a proposed thermodynamic model and their relaxation time varies with deposition conditions. The rate of light induced defect creation and annealing in samples deposited at low temperature and with a large initial defect density, decreases progressively as the irreversible defects are removed by annealing.
1963 ◽
Vol 39
(10)
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pp. 2730-2735
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Keyword(s):
2000 ◽
Vol 14
(29n31)
◽
pp. 3685-3690
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Keyword(s):
The low temperature dependence of magnetization of as-deposited Fe-Hf-C-N nanocrystalline thin films
1999 ◽
Vol 12
(5-8)
◽
pp. 1097-1102
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