Theoretical analysis of Hall factor and hole mobility in p-type 4H-SiC considering anisotropic valence band structure
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2015 ◽
Vol 12
(10)
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pp. 3201-3205
1979 ◽
Vol 43
(15)
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pp. 1134-1137
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1993 ◽
Vol 619
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pp. 168-173
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1975 ◽
Vol 12
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pp. 255-259
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2004 ◽
Vol 237
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pp. 343-347
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