scholarly journals A diffusion-limited reaction model for self-propagating Al/Pt multilayers with quench limits

2018 ◽  
Vol 123 (14) ◽  
pp. 145302 ◽  
Author(s):  
D. E. Kittell ◽  
C. D. Yarrington ◽  
M. L. Hobbs ◽  
M. J. Abere ◽  
D. P. Adams
Symmetry ◽  
2020 ◽  
Vol 12 (10) ◽  
pp. 1744
Author(s):  
Changsun Eun

We present a simple reaction model to study the influence of the size, number, and spatial arrangement of reactive patches on a reactant placed on a plane. Specifically, we consider a reactant whose surface has an N × N square grid structure, with each square cell (or patch) being chemically reactive or inert for partner reactant molecules approaching the cell via diffusion. We calculate the rate constant for various cases with different reactive N × N square patterns using the finite element method. For N = 2, 3, we determine the reaction kinetics of all possible reactive patterns in the absence and presence of periodic boundary conditions, and from the analysis, we find that the dependences of the kinetics on the size, number, and spatial arrangement are similar to those observed in reactive patches on a sphere. Furthermore, using square reactant models, we present a method to significantly increase the rate constant by sequentially breaking the patches into smaller patches and arranging them symmetrically. Interestingly, we find that a reactant with a symmetric patch distribution has a power–law relation between the rate constant and the number of reactive patches and show that this works well when the total reactive area is much less than the total surface area of the reactant. Since our N × N discrete models enable us to examine all possible reactive cases completely, they provide a solid understanding of the surface reaction kinetics, which would be helpful for understanding the fundamental aspects of the competitions between reactive patches arising in real applications.


1990 ◽  
Vol 202 ◽  
Author(s):  
S. M. Heald ◽  
J. K. D. Jayanetti ◽  
R. C. Budhani

ABSTRACTThe amorphous to crystalline transformation of Ge in Al/Ge thin film couples has been studied using glancing angle EXAFS, x-ray reflectivity and diffraction. It was found that crystallization occurs at a much lower temperature (118-150 °C) than for bulk Ge, and initiates at the Al/Ge interface. X-ray diffraction studies were made at 152 °C to study the kinetics of the reaction. After an initial period we find good agreement with a square root dependence of the time, characteristic of a diffusion limited reaction.


1989 ◽  
Vol 63 (7) ◽  
pp. 700-703 ◽  
Author(s):  
Martin A. Burschka ◽  
Charles R. Doering ◽  
Daniel ben-Avraham

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