Dual-mode resonant infrared detector based on film bulk acoustic resonator toward ultra-high sensitivity and anti-interference capability

2018 ◽  
Vol 112 (24) ◽  
pp. 243501 ◽  
Author(s):  
Cong Chen ◽  
Zhengguo Shang ◽  
Feng Zhang ◽  
Hong Zhou ◽  
Jing Yang ◽  
...  
2011 ◽  
Vol 201-203 ◽  
pp. 700-703
Author(s):  
Wei Tsai Chang ◽  
Ying Chung Chen ◽  
Re Ching Lin ◽  
Kuo Sheng Kao ◽  
Jia Ming Jiang ◽  
...  

This paper reports a dual-mode film bulk acoustic resonator (FBAR) device combined with Au/Cr layer to construct a liquid sensor. In order to obtain a liquid sensor with high sensitivity, the dual-mode FBAR with piezoelectric layer of ZnO thin film has been investigated. The dual-mode characteristics of FBAR appeared by off-axis deposition of ZnO thin film with the RF magnetron sputtering. The top and bottom electrodes consisted of a titanium (Ti) and a platinum (Pt) layers were deposited by dual-gun DC sputtering system. Owing to the chemical stability, the Pt layer is not only a perfect bottom electrode but also an etching stop layer. The gold layer (Au) is adopted for the formation of sensory area. In order to improve the adhesion between the Au layer and the Pt layer, a chromium (Cr) layer was deposited onto the backside cavity of the FBAR device before the Au layer was deposited by a DC sputter. The Au/Cr layer is used as the binding layer with analytes of DI water because of its hydrophile. The frequency response is measured using an HP8720 network analyzer and a CASCADE probe station. The resonant frequencies of longitude and shear modes in air appear at 2262.5 MHz and 1012.5MHz, whereas the resonant frequencies of longitude and shear modes in DI water are 2062.5 MHz and 955MHz, respectively.


2011 ◽  
Vol 308-310 ◽  
pp. 201-208
Author(s):  
Wei Tsai Chang ◽  
Ying Chung Chen ◽  
Chien Chuan Cheng ◽  
Kuo Sheng Kao ◽  
Re Ching Lin ◽  
...  

This paper describes the design and fabrication of dual-mode film bulk acoustic resonator (TFBAR) devices to construct wafer level dual-band T-ladder type filters. The T-ladder type filters is selected in this study for its high quality and simple fabrication processes. The c-axis-tilted ZnO thin films to obtain dual-mode TFBAR devices have been investigated. The characteristics of dual-mode TFBAR devices appeared by off-axis deposition of ZnO thin films with the RF magnetron sputtering. The top and bottom electrodes consisted of titanium (Ti) and platinum (Pt) layers are deposited by dual-gun DC sputtering system. The pass-band width of filters is controlled by the mass loading on the dual-mode. The frequency response is measured using an HP8720 network analyzer and a CASCADE probe station.


2018 ◽  
Vol 28 (7) ◽  
pp. 075010 ◽  
Author(s):  
Congcong Gu ◽  
Weipeng Xuan ◽  
Shurong Dong ◽  
Xiaozhi Wang ◽  
Honglang Li ◽  
...  

2007 ◽  
Vol 90 (14) ◽  
pp. 143503 ◽  
Author(s):  
Z. Yan ◽  
X. Y. Zhou ◽  
G. K. H. Pang ◽  
T. Zhang ◽  
W. L. Liu ◽  
...  

2014 ◽  
Vol 602-605 ◽  
pp. 1972-1975
Author(s):  
Rui Xue Wang ◽  
Cheng Zhang Han ◽  
Ai Liu

This paper describes the fabrication process of the thin film bulk acoustic resonator (FBAR) based on good quality aluminum nitride (AlN) film and the measurement of FBAR by a network analyzer. The AlN film with a highly c-axis orientation and homogeneous surface morphologies is deposited on Bragg reflectors as piezoelectric film by magnetron sputtering. The Bragg reflectors consisted of Ti and W fabricated under the resonator for acoustic isolation improves performance and compatibility of the FBAR and reduces the parasitic resistance of the electrode. The devices are packaged on tube seat and fixed on a high frequency PCB board designed specially for measurement and applications. The FBAR achieved a Q factor of 505 and k2effof 3.42% at a resonant frequency of 2.22 GHz. A high sensitivity of 4.79 kHz·cm2/ng is obtained in the FBAR, which is higher than quartz crystal microbalance.


2021 ◽  
Vol 36 (2) ◽  
pp. 025018
Author(s):  
Jiahao Zhao ◽  
Yanhui Xing ◽  
Jun Han ◽  
Wenkui Lin ◽  
Xiaofan Yun ◽  
...  

2013 ◽  
Vol 2013 ◽  
pp. 1-8 ◽  
Author(s):  
Ying-Chung Chen ◽  
Wei-Tsai Chang ◽  
Kuo-Sheng Kao ◽  
Chun-Hung Yang ◽  
Chien-Chuan Cheng

Dual-mode thin film bulk acoustic resonator (TFBAR) devices are fabricated with c-axis tilted AlN films. To fabricate dual-mode TFBAR devices, the off-axis RF magnetron sputtering method for the growth of tilted piezoelectric AlN thin films is adopted. In this report, the AlN thin films are deposited with tilting angles of 15° and 23°. The frequency response of the TFBAR device with 23° tilted AlN thin film is measured to reveal its ability to provide dual-mode resonance. The sensitivities of the longitudinal and shear modes to mass loading are calculated to be 2295 Hz cm2/ng and 1363 Hz cm2/ng with the mechanical quality factors of 480 and 287, respectively. The sensitivities of the longitudinal and shear modes are calculated to be 0 and 15 Hz cm2/μg for liquid loading.


2011 ◽  
Vol 3 (2) ◽  
pp. 91-98 ◽  
Author(s):  
Xu Zhang ◽  
Wencheng Xu ◽  
Junseok Chae

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