A molecular dynamics study on indentation response of single crystalline wurtzite GaN

2018 ◽  
Vol 124 (11) ◽  
pp. 115102 ◽  
Author(s):  
Yu Qian ◽  
Fulin Shang ◽  
Qiang Wan ◽  
Yabin Yan
Author(s):  
Frank Bergner ◽  
Michael Schaper ◽  
Ralf Hammer ◽  
Manfred Jurisch ◽  
Andre Kleinwechter ◽  
...  

2014 ◽  
Vol 28 (20) ◽  
pp. 1450135 ◽  
Author(s):  
Zhiguo Wang ◽  
G. Q. Yin ◽  
Liming Jing ◽  
Jianjian Shi ◽  
Zhijie Li

The tensile behavior of single crystalline GaN nanotube bundles was studied using classical molecular dynamics. Stillinger–Weber potential was used to describe the atom–atom interactions. The GaN bundles consisted of several individual GaN nanotubes with {100} side planes. The simulation results show that the nanotube bundles show a brittle to ductile transition (BDT) by changing the temperatures. The fracture of GaN nanotube bundles is ruled by a thermal activated process, higher temperature will lead to the decrease of the critical stress. At high temperatures the individual nanotube in the bundles interact with each other, which induces the increase of the critical stress of bundles.


2014 ◽  
Vol 620 ◽  
pp. 61-66 ◽  
Author(s):  
Qiang Gao ◽  
Yong Bo Guo ◽  
Ying Chun Liang ◽  
Qing Chun Zhang

Based on molecular dynamics method, the tensile process of single crystalline Cu nanorod and single crystalline Cu bulk were simulated at atomic scale. The motion of atoms, total energy of atom-strain curves and number of dislocation atom-strain curves during the tensile process were acquired. The results shown that surface effect has a significant effect on the tensile mechanical properties of single crystalline Cu nanorod. For single crystalline Cu nanorod, the energy of atoms in the edges and surface were higher than the energy of atoms inside the nanorod. Dislocations nucleation in the edges that with high energy and extend along the {111} crystal plane. The nanorods produce plastic deformation and shows excellent ductility under the "dislocation nucleation-energy rising and dislocation layers cross-slip" mechanism of the alternating cycle. For single crystalline Cu bulk, dislocation nucleation randomly and extend to the entire simulation model along the {111} crystal plane quickly. The single crystalline bulk Cu produce fracture under the "microscopic vacancy-microscopic hole-penetration of microscopic holes-fracture" mechanism.


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