scholarly journals Electromodulation spectroscopy of highly mismatched alloys

2019 ◽  
Vol 126 (14) ◽  
pp. 141102 ◽  
Author(s):  
Robert Kudrawiec ◽  
Wladek Walukiewicz

2004 ◽  
Vol 95 (11) ◽  
pp. 6232-6238 ◽  
Author(s):  
K. M. Yu ◽  
W. Walukiewicz ◽  
W. Shan ◽  
J. Wu ◽  
J. W. Beeman ◽  
...  


2019 ◽  
Vol 125 (24) ◽  
pp. 243109 ◽  
Author(s):  
Tooru Tanaka ◽  
Kento Matsuo ◽  
Katsuhiko Saito ◽  
Qixin Guo ◽  
Takeshi Tayagaki ◽  
...  


Author(s):  
K.M. Yu ◽  
M.A. Scarpulla ◽  
R. Farshchi ◽  
O.D. Dubon ◽  
W. Walukiewicz


2005 ◽  
Vol 865 ◽  
Author(s):  
W. Walukiewicz ◽  
K. M. Yu ◽  
J Wu ◽  
J. W. Ager ◽  
W. Shan ◽  
...  

AbstractIt has long been recognized that the introduction of a narrow band of states in a semiconductor band gap could be used to achieve improved power conversion efficiency in semiconductor-based solar cells. The intermediate band would serve as a “stepping stone” for photons of different energy to excite electrons from the valence to the conduction band. An important advantage of this design is that it requires formation of only a single p-n junction, which is a crucial simplification in comparison to multijunction solar cells. A detailed balance analysis predicts a limiting efficiency of more than 50% for an optimized, single intermediate band solar cell. This is higher than the efficiency of an optimized two junction solar cell. Using ion beam implantation and pulsed laser melting we have synthesized Zn1-yMnyOxTe1-x alloys with x<0.03. These highly mismatched alloys have a unique electronic structure with a narrow oxygen-derived intermediate band. The width and the location of the band is described by the Band Anticrossing model and can be varied by controlling the oxygen content. This provides a unique opportunity to optimize the absorption of solar photons for best solar cell performance. We have carried out systematic studies of the effects of the intermediate band on the optical and electrical properties of Zn1-yMnyOxTe1-x alloys. We observe an extension of the photovoltaic response towards lower photon energies, which is a clear indication of optical transitions from the valence to the intermediate band.



2014 ◽  
Author(s):  
Yan-Cheng Lin ◽  
Wu-Ching Chou ◽  
Jen-Inn Chyi ◽  
Tooru Tanaka




2013 ◽  
Vol 383 ◽  
pp. 95-99 ◽  
Author(s):  
W.L. Sarney ◽  
S.P. Svensson ◽  
S.V. Novikov ◽  
K.M. Yu ◽  
W. Walukiewicz ◽  
...  


2018 ◽  
Vol 93 ◽  
pp. 235-243 ◽  
Author(s):  
Bakhtiar Ul Haq ◽  
R. Ahmed ◽  
S. AlFaify ◽  
Faheem K. Butt ◽  
A. Shaari ◽  
...  


Coatings ◽  
2020 ◽  
Vol 10 (3) ◽  
pp. 210
Author(s):  
Cao Phuong Thao ◽  
Thi Tran Anh Tuan ◽  
Dong-Hau Kuo ◽  
Wen-Cheng Ke ◽  
Thach Thi Via Sa Na

Sb anion-substituted gallium nitride films were fabricated by radio frequency reactive sputtering with single Sb-containing cermet targets with different Sb contents under Ar/N2 atmosphere. n-type GaN films with electron concentration of (1.40 ± 0.1) × 1017 cm−3 inverted to p-type Sb-GaN with hole concentration of (5.50 ± 0.3) × 1017 cm−3. The bandgap energy of Sb anion-added Sb-GaN films decreased from 3.20 to 2.72 eV with increasing Sb concentration. The formation of p-type Sb-GaN is attributed to the formation of Ga vacancy at higher Sb concentration. The coexistence of Sb at the Ga cation site and N anion site is an interesting and important result, as GaNSb had been well developed for highly mismatched alloys. The hetero-junction with p-type Sb-GaN/n-Si diodes was all formed by radio frequency (RF) reactive sputtering technology. The electrical characteristics of Sb-GaN diode devices were investigated from −20 to 20 V at room temperature (RT).



2019 ◽  
Vol 125 (15) ◽  
pp. 155702 ◽  
Author(s):  
M. Ting ◽  
K. M. Yu ◽  
M. Jaquez ◽  
I. D. Sharp ◽  
Yifan Ye ◽  
...  


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