scholarly journals Ge doped GaN and Al0.5Ga0.5N-based tunnel junctions on top of visible and UV light emitting diodes

2019 ◽  
Vol 126 (22) ◽  
pp. 224503 ◽  
Author(s):  
V. Fan Arcara ◽  
B. Damilano ◽  
G. Feuillet ◽  
S. Vézian ◽  
K. Ayadi ◽  
...  
2021 ◽  
Vol 118 (23) ◽  
pp. 231102
Author(s):  
Youn Joon Sung ◽  
Dong-Woo Kim ◽  
Geun Young Yeom ◽  
Kyu Sang Kim

1992 ◽  
Vol 283 ◽  
Author(s):  
Peter Steiner ◽  
Frank Kozlowski ◽  
Hermann Sandmaier ◽  
Walter Lang

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.


2007 ◽  
Vol 46 (No. 23) ◽  
pp. L537-L539 ◽  
Author(s):  
Vinod Adivarahan ◽  
Qhalid Fareed ◽  
Surendra Srivastava ◽  
Thomas Katona ◽  
Mikhail Gaevski ◽  
...  

2010 ◽  
Vol 207 (6) ◽  
pp. 1489-1496 ◽  
Author(s):  
R. Nana ◽  
P. Gnanachchelvi ◽  
M. A. Awaah ◽  
M. H. Gowda ◽  
A. M. Kamto ◽  
...  

2008 ◽  
Vol 205 (5) ◽  
pp. 1070-1073 ◽  
Author(s):  
E. Dimakis ◽  
A. Yu. Nikiforov ◽  
C. Thomidis ◽  
L. Zhou ◽  
D. J. Smith ◽  
...  

2019 ◽  
Vol 209 ◽  
pp. 52-56 ◽  
Author(s):  
Tingting Bai ◽  
Lei Zhao ◽  
Yanping Niu ◽  
Kang Luo ◽  
Wenbo Chen ◽  
...  

2017 ◽  
Vol 123 (4) ◽  
Author(s):  
Shengnan Li ◽  
Ping Huang ◽  
Cai’e Cui ◽  
Lei Wang ◽  
Yue Tian ◽  
...  

2007 ◽  
Vol 105 (2) ◽  
pp. 803-808 ◽  
Author(s):  
Kelechi C. Anyaogu ◽  
Andrey A. Ermoshkin ◽  
Douglas C. Neckers ◽  
Alex Mejiritski ◽  
Oleg Grinevich ◽  
...  

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