Growth and properties of near-UV light emitting diodes based on InN/GaN quantum wells

High quantum efficiency LEDs with InGaN/GaN/AlGaN/GaN MQWs have been demonstrated. The proposed GaN interlayer barrier can not only increase the concentration and the spatial overlap of carriers, but also improve the quality of the MQWs.

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High efficiency GaN-based near UV light emitting diodes with asymmetric triangular multiple quantum wells

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XXII ◽

10.1117/12.2289389 ◽

2018 ◽

Author(s):

Heng Li ◽

Shiou-Yi Kuo ◽

Tien-Chang Lu ◽

Jun-Rong Chen ◽

Chia-Jui Chang

Keyword(s):

Quantum Wells ◽

High Efficiency ◽

Light Emitting Diodes ◽

Uv Light ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Light Emitting

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Auger recombination in AlGaN quantum wells for UV light-emitting diodes

Applied Physics Letters ◽

10.1063/1.5044383 ◽

2018 ◽

Vol 113 (7) ◽

pp. 071107 ◽

Cited By ~ 27

Author(s):

Felix Nippert ◽

Mohammad Tollabi Mazraehno ◽

Matthew J. Davies ◽

Marc P. Hoffmann ◽

Hans-Jürgen Lugauer ◽

...

Keyword(s):

Quantum Wells ◽

Auger Recombination ◽

Light Emitting Diodes ◽

Uv Light ◽

Light Emitting

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On the nano-engineered III-nitride quantum-wells-based deep-UV light emitting diodes for COVID disinfection applications

Second iiScience International Conference 2021: Recent Advances in Photonics and Physical Sciences ◽

10.1117/12.2600576 ◽

2021 ◽

Author(s):

Trailokya Bhattarai ◽

M. Yasin Akhtar Raja ◽

Abasifreke Ebong ◽

M. Khizar Bhutta

Keyword(s):

Quantum Wells ◽

Light Emitting Diodes ◽

Uv Light ◽

Light Emitting ◽

Deep Uv

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Surface-plasmon-enhanced deep-UV light emitting diodes based on AlGaN multi-quantum wells

Scientific Reports ◽

10.1038/srep00816 ◽

2012 ◽

Vol 2 (1) ◽

Cited By ~ 81

Author(s):

Na Gao ◽

Kai Huang ◽

Jinchai Li ◽

Shuping Li ◽

Xu Yang ◽

...

Keyword(s):

Quantum Wells ◽

Surface Plasmon ◽

Light Emitting Diodes ◽

Uv Light ◽

Light Emitting ◽

Deep Uv

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Performance of vertical type deep UV light-emitting diodes depending on the Ga-face n-contact hole density

Applied Physics Letters ◽

10.1063/5.0052416 ◽

2021 ◽

Vol 118 (23) ◽

pp. 231102

Author(s):

Youn Joon Sung ◽

Dong-Woo Kim ◽

Geun Young Yeom ◽

Kyu Sang Kim

Keyword(s):

Light Emitting Diodes ◽

Uv Light ◽

Hole Density ◽

Light Emitting ◽

Deep Uv

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53.3: The Size and Temperature Effect of Ideality Factor in GaN/InGaN Multiple Quantum Wells Micro Light Emitting Diodes (Micro‐LEDs)

SID Symposium Digest of Technical Papers ◽

10.1002/sdtp.14496 ◽

2021 ◽

Vol 52 (S1) ◽

pp. 387-390

Author(s):

Yibo Liu ◽

Ke Zhang ◽

Joe Chan ◽

Sze-Yan Yeung ◽

Zhaojun Liu ◽

...

Keyword(s):

Quantum Wells ◽

Temperature Effect ◽

Ideality Factor ◽

Light Emitting Diodes ◽

Multiple Quantum Wells ◽

Multiple Quantum ◽

Light Emitting

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New Results on Electroluminescence from Porous Silicon

MRS Proceedings ◽

10.1557/proc-283-343 ◽

1992 ◽

Vol 283 ◽

Cited By ~ 22

Author(s):

Peter Steiner ◽

Frank Kozlowski ◽

Hermann Sandmaier ◽

Walter Lang

Keyword(s):

Porous Silicon ◽

Quantum Efficiency ◽

Light Emitting Diodes ◽

Uv Light ◽

Green Light ◽

Light Emitting ◽

Porous Region ◽

First Results

ABSTRACTFirst results on light emitting diodes in porous silicon were reported in 1991. They showed a quantum efficiency of 10-7 to 10-5 and an orange spectrum. Over the last year some progress was achieved:- By applying UV-light during the etching blue and green light emitting diodes in porous silicon are fabricated.- When a p/n junction is realized within the porous region, a quantum efficiency of 10-4 is obtained.

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