scholarly journals Evaluation of localized vertical current formation in carrier selective passivation layers of silicon solar cells by conductive AFM

2019 ◽  
Author(s):  
Susanne Richter ◽  
Yevgeniya Larionova ◽  
Stephan Großer ◽  
Matthias Menzel ◽  
Henning Schulte-Huxel ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Solar Cells ◽  
Conductive Afm ◽  
Passivation Layers

scholarly journals Surface Passivation of Boron Emitters on n-Type Silicon Solar Cells

2019 ◽  
Vol 11 (14) ◽  
pp. 3784
Author(s):  
Ji Yeon Hyun ◽  
Soohyun Bae ◽  
Yoon Chung Nam ◽  
Dongkyun Kang ◽  
Sang-Won Lee ◽  
...  
Keyword(s):  
Solar Cells ◽  
Surface Passivation ◽  
Atom Probe ◽  
Silicon Solar Cells ◽  
Capacitance Voltage ◽  
Passivation Layers ◽  
Chemical Passivation ◽  
Electron Energy Loss ◽  
Hydrogenation Effect ◽  
Antireflective Properties

Al2O3/SiNx stack passivation layers are among the most popular layers used for commercial silicon solar cells. In particular, aluminum oxide has a high negative charge, while the SiNx film is known to supply hydrogen as well as impart antireflective properties. Although there are many experimental results that show that the passivation characteristics are lowered by using the stack passivation layer, the cause of the passivation is not yet understood. In this study, we investigated the passivation characteristics of Al2O3/SiNx stack layers. To identify the hydrogenation effect, we analyzed the hydrogen migration with atom probe tomography by comparing the pre-annealing and post-annealing treatments. For chemical passivation, capacitance-voltage measurements were used to confirm the negative fixed charge density due to heat treatment. Moreover, the field-effect passivation was understood by confirming changes in the Al2O3 structure using electron energy-loss spectroscopy.

scholarly journals H2O/O2 Vapor Annealing Effect on Spin Coating Alumina Thin Films for Passivation of Silicon Solar Cells

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Abdullah Uzum ◽  
Hiroyuki Kanda ◽  
Takuma Noguchi ◽  
Yuya Nakazawa ◽  
Shota Taniwaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Spin Coating ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Ambient Air ◽  
Silicon Solar Cells ◽  
Crystalline Silicon Solar Cells ◽  
Passivation Layers ◽  
Coating Method

Aluminum acetylacetonate-based AlOx thin films were introduced as a low-cost, high-quality passivation layers for crystalline silicon solar cells. Films were formed by a spin coating method on p-type silicon substrates at 450°C in ambient air, O2, or water vapor (H2O/O2) for 15 or 120 min. XPS analysis confirms the AlOx formation and reveals a high intensity of interfacial SiOx at the AlOx/Si interface of processed wafers. Ambient H2O/O2 was found to be more beneficial for the activation of introduced AlOx passivation films which offers high lifetime improvements with a low thermal budget. Carrier lifetime measurements provides that symmetrically coated wafers reach 119.3 μs and 248.3 μs after annealing in ambient H2O/O2 for 15 min and 120 min, respectively.

Efficient silicon nitride SiN x :H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells

2019 ◽  
Vol 27 (11) ◽  
pp. 1007-1019 ◽  
Author(s):  
Jean‐François Lelièvre ◽  
Bishal Kafle ◽  
Pierre Saint‐Cast ◽  
Paul Brunet ◽  
Romain Magnan ◽  
...  
Keyword(s):  
Solar Cells ◽  
Silicon Nitride ◽  
Atmospheric Pressure ◽  
Silicon Solar Cells ◽  
Passivation Layers
Sign in / Sign up

Export Citation Format

Share Document