Material Research on High Quality Passivation Layers with Controlled Fixed Charge for Crystalline Silicon Solar Cells

2010 ◽  
Author(s):  
T. Tachibana ◽  
T. Sameshima ◽  
Y. Iwashita ◽  
Y. Kiyota ◽  
T. Chikyow ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Fixed Charge ◽  
Silicon Solar Cells ◽  
Material Research ◽  
High Quality ◽  
Crystalline Silicon Solar Cells ◽  
Passivation Layers

Material Research on High-Quality Passivation Layers with Controlled Fixed Charge for Crystalline Silicon Solar Cells

2011 ◽  
Vol 50 (4) ◽  
pp. 04DP09 ◽  
Author(s):  
Tomihisa Tachibana ◽  
Takashi Sameshima ◽  
Yuta Iwashita ◽  
Yuji Kiyota ◽  
Toyohiro Chikyow ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Fixed Charge ◽  
Silicon Solar Cells ◽  
Material Research ◽  
High Quality ◽  
Crystalline Silicon Solar Cells ◽  
Passivation Layers

Material Research on High-Quality Passivation Layers with Controlled Fixed Charge for Crystalline Silicon Solar Cells

2011 ◽  
Vol 50 (4S) ◽  
pp. 04DP09 ◽  
Author(s):  
Tomihisa Tachibana ◽  
Takashi Sameshima ◽  
Yuta Iwashita ◽  
Yuji Kiyota ◽  
Toyohiro Chikyow ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Fixed Charge ◽  
Silicon Solar Cells ◽  
Material Research ◽  
High Quality ◽  
Crystalline Silicon Solar Cells ◽  
Passivation Layers

scholarly journals H2O/O2 Vapor Annealing Effect on Spin Coating Alumina Thin Films for Passivation of Silicon Solar Cells

2019 ◽  
Vol 2019 ◽  
pp. 1-7
Author(s):  
Abdullah Uzum ◽  
Hiroyuki Kanda ◽  
Takuma Noguchi ◽  
Yuya Nakazawa ◽  
Shota Taniwaki ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Spin Coating ◽  
Crystalline Silicon ◽  
Low Cost ◽  
Ambient Air ◽  
Silicon Solar Cells ◽  
Crystalline Silicon Solar Cells ◽  
Passivation Layers ◽  
Coating Method

Aluminum acetylacetonate-based AlOx thin films were introduced as a low-cost, high-quality passivation layers for crystalline silicon solar cells. Films were formed by a spin coating method on p-type silicon substrates at 450°C in ambient air, O2, or water vapor (H2O/O2) for 15 or 120 min. XPS analysis confirms the AlOx formation and reveals a high intensity of interfacial SiOx at the AlOx/Si interface of processed wafers. Ambient H2O/O2 was found to be more beneficial for the activation of introduced AlOx passivation films which offers high lifetime improvements with a low thermal budget. Carrier lifetime measurements provides that symmetrically coated wafers reach 119.3 μs and 248.3 μs after annealing in ambient H2O/O2 for 15 min and 120 min, respectively.

scholarly journals High quality boron-doped epitaxial layers grown at 200°C from SiF4/H2/Ar gas mixtures for emitter formation in crystalline silicon solar cells

AIP Advances ◽  
2017 ◽  
Vol 7 (2) ◽  
pp. 025006 ◽  
Author(s):  
Ronan Léal ◽  
Farah Haddad ◽  
Gilles Poulain ◽  
Jean-Luc Maurice ◽  
Pere Roca i Cabarrocas
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Gas Mixtures ◽  
Silicon Solar Cells ◽  
Epitaxial Layers ◽  
High Quality ◽  
Crystalline Silicon Solar Cells ◽  
Boron Doped ◽  
Ar Gas

Aluminum fire-through with different types of the rear passivation layers in crystalline silicon solar cells

2012 ◽  
Vol 18 (4) ◽  
pp. 699-703 ◽  
Author(s):  
Joo yong Song ◽  
Sungeun Park ◽  
Young Do Kim ◽  
Min Gu Kang ◽  
Sung Ju Tark ◽  
...  
Keyword(s):  
Solar Cells ◽  
Crystalline Silicon ◽  
Silicon Solar Cells ◽  
Crystalline Silicon Solar Cells ◽  
Different Types ◽  
Passivation Layers ◽  
Rear Passivation
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