Critical role of {002} preferred orientation on electronic band structure of electrodeposited monoclinic WO3 thin films

2018 ◽  
Vol 2 (10) ◽  
pp. 2224-2236 ◽  
Author(s):  
Wai Ling Kwong ◽  
Pramod Koshy ◽  
Judy N. Hart ◽  
Wanqiang Xu ◽  
Charles C. Sorrell
Keyword(s):  
Thin Films ◽  
Band Structure ◽  
Oxygen Vacancies ◽  
Electronic Band Structure ◽  
Critical Role ◽  
Preferred Orientation ◽  
Electronic Band ◽  
Wo3 Thin Films

Decoupled effects of crystallographic {002} orientation and oxygen vacancies on the electronic band structure of monoclinic WO3 films.

Electronic band structure of gallium nitride: a comparative angle-resolved photoemission study of single crystals and thin films

2002 ◽  
Vol 507-510 ◽  
pp. 223-228 ◽  
Author(s):  
L. Plucinski ◽  
T. Strasser ◽  
B.J. Kowalski ◽  
K. Rossnagel ◽  
T. Boetcher ◽  
...  
Keyword(s):  
Thin Films ◽  
Gallium Nitride ◽  
Band Structure ◽  
Single Crystals ◽  
Electronic Band Structure ◽  
Electronic Band ◽  
Photoemission Study

Computational Analysis of Strain Effects on Electrical Transport Properties of Crystalline Nanocomposite Thin Films

2011 ◽  
Author(s):  
Hua Li ◽  
Gang Li
Keyword(s):  
Thin Films ◽  
Electrical Conductivity ◽  
Band Structure ◽  
Transport Properties ◽  
Electrical Transport ◽  
Electronic Band Structure ◽  
Electrical Transport Properties ◽  
Electronic Band ◽  
Strain Effects ◽  
Nanocomposite Thin Films

In this work, we model the strain effects on the electrical transport properties of Si/Ge nanocomposite thin films. We utilize a two-band k·p theory to calculate the variation of the electronic band structure as a function of externally applied strains. By using the modified electronic band structure, electrical conductivity of the Si/Ge nanocomposites is calculated through a self-consistent electron transport analysis, where a nonequilibrium Green’s function (NEGF) is coupled with the Poisson equation. The results show that both the tensile uniaxial and biaxial strains increase the electrical conductivity of Si/Ge nanocomposite. The effects are more evident in the biaxial strain cases.

Influence of the Cation on the Surface Electronic Band Structure and Magnetic Properties of Mn:ZnS and Mn:CdS Quantum Dot Thin Films

2019 ◽  
Vol 123 (40) ◽  
pp. 24890-24898 ◽  
Author(s):  
Andrew J. Yost ◽  
Thilini K. Ekanayaka ◽  
Gautam Gurung ◽  
Gaurab Rimal ◽  
Sabit Horoz ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Quantum Dot ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band

Microstructure, optical property, and electronic band structure of cuprous oxide thin films

2011 ◽  
Vol 110 (10) ◽  
pp. 103503 ◽  
Author(s):  
Jun-Woo Park ◽  
Hyungkeun Jang ◽  
Sung Kim ◽  
Suk-Ho Choi ◽  
Hosun Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Property ◽  
Band Structure ◽  
Cuprous Oxide ◽  
Electronic Band Structure ◽  
Oxide Thin Films ◽  
Electronic Band

scholarly journals Dielectric functions and electronic band structure of lead zirconate titanate thin films

2005 ◽  
Vol 98 (9) ◽  
pp. 094108 ◽  
Author(s):  
Hosun Lee ◽  
Youn Seon Kang ◽  
Sang-Jun Cho ◽  
Bo Xiao ◽  
Hadis Morkoç ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Structure ◽  
Lead Zirconate Titanate ◽  
Electronic Band Structure ◽  
Lead Zirconate ◽  
Electronic Band ◽  
Zirconate Titanate

Crystal order in pentacene thin films grown on SiO2 and its influence on electronic band structure

2011 ◽  
Vol 12 (1) ◽  
pp. 195-201 ◽  
Author(s):  
R. Matsubara ◽  
M. Sakai ◽  
K. Kudo ◽  
N. Yoshimoto ◽  
I. Hirosawa ◽  
...  
Keyword(s):  
Thin Films ◽  
Band Structure ◽  
Electronic Band Structure ◽  
Electronic Band

Role of Electronic Band Structure and Lattice Parameters in Magnetism of the R2(Fe,M)17, М = Si, Al Compounds

2009 ◽  
Vol 152-153 ◽  
pp. 41-44
Author(s):  
Anatoly G. Kuchin ◽  
Yu.V. Knyazev ◽  
Y.I. Kuz’min ◽  
A.V. Lukoyanov ◽  
I.A. Nekrasov ◽  
...  
Keyword(s):  
Band Structure ◽  
Electronic Band Structure ◽  
Lattice Parameters ◽  
Electronic Band ◽  
Volume Dependence

Magnetic, electronic, structural and magnetovolume properties of the R2Fe17-xMx (R = Y, Lu, Ce; M = Si or Al) compounds were studied. We pioneered to apply electronic band parameters determination to account for the anomalous volume dependence of ferromagnetism in these compounds.

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