Photoacoustic characterization of cw argon‐ion laser irradiation of Ge

Thin films of chalcogenides are synthesized by CW argon ion laser irradiation of separate Ge/Se and Se/Te film sandwiches according to near stoichiometric proportions. The compound formation and crystalline transition of amorphous Se film are characterized by observing photomicrographs and optical absorption spectra. The composite film of bilayer Ge/Se does not form compounds but deposits as separate elements under equivalent laser fluence.

Download Full-text

Transient heating and melting transformations in argon‐ion laser irradiation of polysilicon films

Journal of Applied Physics ◽

10.1063/1.353925 ◽

1993 ◽

Vol 73 (12) ◽

pp. 8088-8096 ◽

Cited By ~ 4

Author(s):

Xianfan Xu ◽

Scott L. Taylor ◽

Hee K. Park ◽

Costas P. Grigoropoulos

Keyword(s):

Laser Irradiation ◽

Transient Heating ◽

Argon Ion Laser ◽

Polysilicon Films ◽

Ion Laser ◽

Argon Ion

Download Full-text

Basic study on visible light activated dental composite resins - Polymerization and curing properties in argon ion laser irradiation.

The Review of Laser Engineering ◽

10.2184/lsj.17.9_642 ◽

1989 ◽

Vol 17 (9) ◽

pp. 642-651 ◽

Cited By ~ 2

Author(s):

Kaoru SUZUKI ◽

Shigeyuki MASUTANI ◽

Tetsuya TANIYAMA ◽

Junji NAKATA ◽

Takaya MASUTANI

Keyword(s):

Visible Light ◽

Laser Irradiation ◽

Composite Resins ◽

Dental Composite ◽

Basic Study ◽

Argon Ion Laser ◽

Dental Composite Resins ◽

Ion Laser ◽

Argon Ion

Download Full-text

Transient inhibition of L929 cell mitosis and locomotion by argon ion laser irradiation

In Vitro Cellular & Developmental Biology - Animal ◽

10.1007/s11626-998-0098-6 ◽

1998 ◽

Vol 34 (2) ◽

pp. 154-157

Author(s):

Karl W. Lanks ◽

Jian-Ping Gao ◽

Bai-Tang Lai

Keyword(s):

Laser Irradiation ◽

L929 Cell ◽

Argon Ion Laser ◽

Ion Laser ◽

Argon Ion ◽

Cell Mitosis

Download Full-text

Partial Photoresolution of Some Chromium (III) Complexes of Phenanthroline and Bipyridine Using Circularly Polarized Laser Irradiation

Canadian Journal of Chemistry ◽

10.1139/v72-541 ◽

1972 ◽

Vol 50 (20) ◽

pp. 3381-3383 ◽

Cited By ~ 12

Author(s):

Noel A. P. Kane-Maguire ◽

Cooper H. Langford

Keyword(s):

Circular Dichroism ◽

Laser Irradiation ◽

Polarized Light ◽

Steady States ◽

Circularly Polarized Light ◽

Circularly Polarized ◽

Argon Ion Laser ◽

Ion Laser ◽

Argon Ion ◽

Circular Dichroïsm

Partial photoresolution of [Formula: see text], Cr(C2O4)2phen−, and [Formula: see text] by irradiation with circularly polarized light from an argon ion laser and 496.5 or 514.5 nm is reported. Steady states corresponding to 1–2% resolution are achieved. They are in agreement with predictions from known circular dichroism and the assumption that differential isomerization is simply a consequence of differential absorptivity of the enantiomers.

Download Full-text

Laser Induced Etching for Generation of Si Nanocrystals and Spectroscopic Investigation of Morphology

Journal of Metastable and Nanocrystalline Materials ◽

10.4028/www.scientific.net/jmnm.23.43 ◽

2005 ◽

Vol 23 ◽

pp. 43-46

Author(s):

H.S. Mavi ◽

S. Rath ◽

Arun Shukla

Keyword(s):

Quantum Confinement ◽

Silicon Nanocrystals ◽

Laser Wavelength ◽

Interconnected Network ◽

Substrate Type ◽

Argon Ion Laser ◽

Si Nanocrystals ◽

Ion Laser ◽

Laser Induced Etching ◽

Argon Ion

Laser-induced etching of silicon is used to generate silicon nanocrystals. The pore structure depends on the substrate type and etching laser wavelength. Porous silicon (PS) samples prepared by Nd:YAG laser (1.16 eV) etching of n-type substrate showed a fairly uniform and highly interconnected network of nearly circular pores separated by thin columnar boundaries, while no circular pits were produced by argon- ion laser (2.41 eV) etching under similar conditions. The size and size distribution of the nanocrystals are investigated by Raman and photoluminescence spectroscopies and analyzed within the framework of quantum confinement models.

Download Full-text