Comparison of solar cell performance to calculations using different energy band‐gap narrowing models

1980 ◽  
Vol 37 (11) ◽  
pp. 1009-1011 ◽  
Author(s):  
H. T. Weaver
RSC Advances ◽  
2016 ◽  
Vol 6 (57) ◽  
pp. 52395-52402 ◽  
Author(s):  
Hind Fadhil Oleiwi ◽  
Sin Tee Tan ◽  
Hock Beng Lee ◽  
Chi Chin Yap ◽  
Riski Titian Ginting ◽  
...  

The intercalation of CdS on ZnO nanorods modified the optical band gap effectively and improved the solar cell performance significantly.


2014 ◽  
Vol 705 ◽  
pp. 324-328
Author(s):  
Young Il Kwon ◽  
Dae Hyun Jeong

For an efficient solution in the organic solar cell, the requirements may be largely as follows: development of organic semi-conductor material with a low energy band gap, enhancement of efficiency through morphology and surface control and an increase in efficiency utilizing tandem cell and plasmon technology. This study analyzed research trends in these three fields through a network analysis and mapping analysis using thesis information and patent information. It was shown that in case of the enhancement of efficiency through the development of semi-conductor material with an energy band gap on organic solar cell, morphology and surface control, there have been many ongoing studies since 2007. The enhancement technology for efficient utilization of tandem cell and plasmon technology has been frequently studied recently.


Author(s):  
Christoph Krammer ◽  
Christian Huber ◽  
Thomas Schnabel ◽  
Christian Zimmermann ◽  
Mario Lang ◽  
...  

2018 ◽  
Vol 54 (1A) ◽  
pp. 183
Author(s):  
Phung Dinh Hoat

Operation of ZnO/In2S3/Cu2Sn3S7/Mo solar cell was calculated using the SCAPS software. Main input data were energy band gap Eg, absorption coefficient α, thickness d, mobility μ and carrier concentration n of the ZnO, In2S3 and Cu2Sn3S7 films obtained from experiments. In all calculation processes, parameters of the ZnO (Eg = 3.3 eV, d = 0.2 μm, μn = 100 cm2/(Vs)) and In2S3 (Eg = 2.96 eV, d = 0.1 μm, μn = 50 cm2/(Vs)) films were kept constant. Effects of thickness d and carrier concentration np of the Cu2Sn3S7 (αmax = 4.2×104 cm-1, Eg = 1.46 eV) film on Voc, Jsc, Vm, Jm, FF and η of the cell were investigated in the ranges of d = 0.3 – 3.5 μm and np = 1017 – 1020 cm-3. Under the standard AM 1.5G illumination at 300 K, the ZnO/In2S3/Cu2Sn3S7/Mo solar cell having Rs = 10 Ω.cm2 and Rsh = 1×106 Ω.cm2 using Cu2Sn3S7 film having d = 2 μm, αmax = 4.2×104 cm-1, Eg = 1.46 eV, μp = 15 cm2/(Vs) and np = 1020 cm-3 has the highest conversion efficiency ηmax = 18.0 % with Voc = 0.98 V, Jsc = 31.2 mA/cm2, Vm = 0.62 V, Jm = 28.8 mA/cm2 and FF = 58.8 %.


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