Molecular beam epitaxial growth of single‐crystal Fe films on GaAs

1981 ◽  
Vol 39 (5) ◽  
pp. 397-399 ◽  
Author(s):  
G. A. Prinz ◽  
J. J. Krebs
1985 ◽  
Vol 47 (11) ◽  
pp. 1187-1189 ◽  
Author(s):  
J. P. Harbison ◽  
D. M. Hwang ◽  
J. Levkoff ◽  
G. E. Derkits

Author(s):  
Parshant Kumar ◽  
Lihua Li ◽  
L. C. Calhoun ◽  
P. Boudreaux ◽  
Don L. DeVoe

A new process has been developed for the fabrication of AlGaAs-based MEMS which the inherent piezoelectric transduction present in this material to be used for sensing and actuation. The process combines molecular beam epitaxial growth of single-crystal Al0.3Ga0.7As multilayer, inductively coupled plasma reactive-ion etching (ICP-RIE), and highly selective wet etching of GaAs to produce released Al0.3Ga0.7As structures. The process has been validated through the fabrication of both cantilever and doubly clamped beam structures, and has wider use for applications where large electromechanical coupling strength and single-crystal heterostructure are desired.


2011 ◽  
Vol 98 (9) ◽  
pp. 092901 ◽  
Author(s):  
C. Merckling ◽  
G. Saint-Girons ◽  
C. Botella ◽  
G. Hollinger ◽  
M. Heyns ◽  
...  

1997 ◽  
Vol 175-176 ◽  
pp. 883-887 ◽  
Author(s):  
J.H. Roslund ◽  
O. Zsebők ◽  
G. Swenson ◽  
T.G. Andersson

2011 ◽  
Vol 334 (1) ◽  
pp. 113-117 ◽  
Author(s):  
Kevin Goodman ◽  
Vladimir Protasenko ◽  
Jai Verma ◽  
Tom Kosel ◽  
Grace Xing ◽  
...  

1979 ◽  
Vol 35 (2) ◽  
pp. 97-98 ◽  
Author(s):  
Takafumi Yao ◽  
Yunosuke Makita ◽  
Shigeru Maekawa

2000 ◽  
Vol 208 (1-4) ◽  
pp. 93-99 ◽  
Author(s):  
Y Nakata ◽  
K Mukai ◽  
M Sugawara ◽  
K Ohtsubo ◽  
H Ishikawa ◽  
...  

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