Onset of diffusion‐drift emission regime and the transition from exponential to linear current‐voltage characteristic of triangular barrier semiconductor structures

1982 ◽  
Vol 40 (9) ◽  
pp. 814-816 ◽  
Author(s):  
F. A. Buot ◽  
J. A. Krumhansl ◽  
J. B. Socha
1980 ◽  
Vol 19 (5) ◽  
pp. 991-992 ◽  
Author(s):  
Yoshihiro Yamamoto ◽  
Katsumi Yoshino ◽  
Yoshio Inuishi

Author(s):  
Alexander A. Logachev ◽  
Irina N. Poluyanova ◽  
Konstantin K. Zabello ◽  
Sergey M. Shkol'nik

2004 ◽  
Vol 30 (9) ◽  
pp. 736-738
Author(s):  
I. K. Kamilov ◽  
K. M. Aliev ◽  
Kh. O. Ibragimov ◽  
N. S. Abakarova

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