Arc lamp zone melting and recrystallization of Si films on oxidized silicon substrates

1982 ◽  
Vol 41 (9) ◽  
pp. 824-826 ◽  
Author(s):  
T. J. Stultz ◽  
J. F. Gibbons
Keyword(s):  
Zone Melting ◽  
Silicon Substrates ◽  
Si Films

Electron Energy Analysis of Germanium and Silica Layers on Silicon Substrates

1975 ◽  
Vol 33 ◽  
pp. 96-97
Author(s):  
R. W. Ditchfield ◽  
A. G. Cullis
Keyword(s):  
Epitaxial Growth ◽  
Electron Energy ◽  
Silicon Substrates ◽  
Secondary Phases ◽  
Si Substrates ◽  
Transmission Electron ◽  
Layer Structures ◽  
Si Films ◽  
Electron Energy Loss ◽  
Growth Centres

An energy analyzing transmission electron microscope of the Möllenstedt type was used to measure the electron energy loss spectra given by various layer structures to a spatial resolution of 100Å. The technique is an important, method of microanalysis and has been used to identify secondary phases in alloys and impurity particles incorporated into epitaxial Si films.Layers Formed by the Epitaxial Growth of Ge on Si Substrates Following studies of the epitaxial growth of Ge on (111) Si substrates by vacuum evaporation, it was important to investigate the possible mixing of these two elements in the grown layers. These layers consisted of separate growth centres which were often triangular and oriented in the same sense, as shown in Fig. 1.

Electrical Characteristics and Device Applications of Zone-Melting-Recrystallized Si Films on SiO2

1982 ◽  
Vol 13 ◽  
Author(s):  
B-Y. Tsaur ◽  
John C. C. Fan ◽  
M. W. Geis ◽  
R. L. Chapman ◽  
S. R. J. Brueck ◽  
...  
Keyword(s):  
Three Dimensional ◽  
Zone Melting ◽  
Dimensional Structure ◽  
Electrical Characteristics ◽  
Mos Capacitors ◽  
Test Circuit ◽  
Speed Performance ◽  
Thin Film Resistors ◽  
High Yields ◽  
Si Films

ABSTRACTDevice-quality Si films have been prepared by using graphite strip heaters for zone melting poly-Si films deposited on SiO2-coated substrates. The electrical characteristics of these films have been studied by the fabrication and evaluation of thin-film resistors, Mosfets and MOS capacitors. High yields of functional transistor arrays and ring oscillators with promising speed performance have been obtained for CMOS test circuit chips fabricated in recrystallized Si films on 2-inch-diameter Si wafers. Dualgate Mosfets with a three-dimensional structure have been fabricated by using the zone-melting recrystallization technique.

In situ observation of lamp zone melting of Si films on patterned SiO2

1986 ◽  
Vol 48 (5) ◽  
pp. 350-352 ◽  
Author(s):  
D. Dutartre
Keyword(s):  
Zone Melting ◽  
In Situ Observation ◽  
Si Films

Zone‐melting recrystallization of 3‐in.‐diam Si films on SiO2‐coated Si substrates

1982 ◽  
Vol 41 (2) ◽  
pp. 186-188 ◽  
Author(s):  
John C. C. Fan ◽  
B‐Y. Tsaur ◽  
R. L. Chapman ◽  
M. W. Geis
Keyword(s):  
Zone Melting ◽  
Si Substrates ◽  
Si Films

Study of the solidification front of Si films in lamp zone melting controlled by patterning the underlying SiO2

1986 ◽  
Vol 59 (2) ◽  
pp. 632-635 ◽  
Author(s):  
D. Dutartre ◽  
M. Haond ◽  
D. Bensahel
Keyword(s):  
Solidification Front ◽  
Zone Melting ◽  
Si Films

Characterization of defects in Si films on SiO2 layer

1990 ◽  
Vol 48 (4) ◽  
pp. 582-583
Author(s):  
Ansheng Liu ◽  
Beiling Shao ◽  
Jianming Yuan
Keyword(s):  
Integrated Circuits ◽  
Cross Section ◽  
Silicon Film ◽  
Scanning Speed ◽  
Zone Melting ◽  
Switching Speed ◽  
Process Region ◽  
Interior Stress ◽  
Si Films

SOI (Silicon-on-lnsulator) offers many advantages for integrated circuits including faster switching speed, high packing density, radiation resistance, and latch-up free. It can also be used in the integration of high voltage devices and/ or sensors. Defect-free Si films with a small interior stress are required for the application mentioned above. Therefore a heat-sink and a valley entrainment structure (Fig. 1) were made in order to confine defects to predetermined locations and to leave the other areas of the recrystallized silicon film defect-free.Using a cross—section specimen electron microscopy we have observed some kinds of defects in unseeded rapid zone-melting-recrystallized (RZMR) Si films which were prepared with a RF-induced graphite strip heater system. The scanning speed of the graphite strip heater is 11 mm / sec. Fig.2 shows a cross-section image of a valley structure specimen. Not any defect has been found in region A, which means that about 10μm wide defect-free Si film can be obtained by the process. Region C is an unpatterned normal area with a uniform thickness.The subgrain boundaries (SGBs) with an interval less than 6μm were observed in the region C.

Stress-enhanced mobility in MOSFETs fabricated in zone-melting-recrystallized poly-Si films

1981 ◽  
Author(s):  
B.-Y. Tsaur ◽  
J.C.C. Fan ◽  
M.W. Geis ◽  
D.J. Silversmith ◽  
R.W. Mountain
Keyword(s):  
Zone Melting ◽  
Enhanced Mobility ◽  
Si Films

SOI/CMOS circuits fabricated in zone-melting-recrystallized Si films on SiO2-coated Si substrates

1982 ◽  
Vol 3 (12) ◽  
pp. 398-401 ◽  
Author(s):  
B.Y. Tsaur ◽  
J.C.C. Fan ◽  
R.L. Chapman ◽  
M.W. Geis ◽  
D.J. Silversmith ◽  
...  
Keyword(s):  
Zone Melting ◽  
Cmos Circuits ◽  
Si Substrates ◽  
Si Films ◽  
Soi Cmos
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