New low dark current, high speed Al0.48In0.52As/ Ga0.47In0.53As avalanche photodiode by molecular beam epitaxy for long wavelength fiber optic communication systems
1984 ◽
Vol 31
(12)
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pp. 1972-1973
1994 ◽
Vol 05
(03)
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pp. 253-274
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Keyword(s):
2003 ◽
Keyword(s):
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