IVA-1 new low dark current high-speed Al0.48In0.52As/Ga0.47In0.53As avalanche photodiode by molecular-beam epitaxy for long wavelength fiber optic communication systems

1984 ◽  
Vol 31 (12) ◽  
pp. 1972-1973
Author(s):  
F. Capasso ◽  
K. Alavi ◽  
A.Y. Cho ◽  
J.M. Parsey ◽  
B. Kasper
Keyword(s):  
Molecular Beam Epitaxy ◽  
Dark Current ◽  
Communication Systems ◽  
High Speed ◽  
Molecular Beam ◽  
Fiber Optic ◽  
Avalanche Photodiode ◽  
Long Wavelength ◽  
Fiber Optic Communication ◽  
Optic Communication

scholarly journals Fabrication of In(P)As Quantum Dots by Interdiffusion of P and As on InP(311)B Substrate

Crystals ◽  
2020 ◽  
Vol 10 (2) ◽  
pp. 90
Author(s):  
Kouichi Akahane ◽  
Atsushi Matsumoto ◽  
Toshimasa Umezawa ◽  
Naokatsu Yamamoto
Keyword(s):  
Quantum Dots ◽  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Communication Systems ◽  
Molecular Beam ◽  
Fiber Optic ◽  
Emission Wavelength ◽  
Growth Mode ◽  
Fiber Optic Communication ◽  
Optic Communication

Herein, we report on our investigation of a fabrication scheme for self-assembled quantum dots (QDs), which is another type of Stranski–Krastanow (S–K) growth mode. The In(P)As QD structure was formed by the irradiation of As flux on an InP(311)B surface in a molecular beam epitaxy system controlled by substrate temperature and irradiation duration. These QDs show photoluminescence at around 1500 nm, which is suitable for fiber optic communication systems. The QDs formed by this structure had high As composition because they had size, density, and emission wavelength similar to those of QDs grown by the usual S–K growth mode.

THE DESIGN AND FABRICATION OF HIGH-SPEED HBT CIRCUITS FOR FIBER-OPTIC COMMUNICATION SYSTEMS

1994 ◽  
Vol 05 (03) ◽  
pp. 253-274 ◽  
Author(s):  
MASAO OBARA ◽  
JUNKO AKAGI
Keyword(s):  
Measurement System ◽  
Communication Systems ◽  
High Speed ◽  
Fiber Optic ◽  
Heterojunction Bipolar Transistor ◽  
Fiber Amplifiers ◽  
Speed Measurement ◽  
Fiber Optic Communication ◽  
Optical Fiber Amplifiers ◽  
Optic Communication

AlGaAs/GaAs heterojunction bipolar transistor (HBT) high speed ICs have been paving the way for the most sophisticated fiber-optic communication systems since the late 1980s. Recently 20 Gbps HBT ICs have been developed to accommodate the emergence of optical fiber amplifiers. HBT technology is now proceeding towards the development of 40 Gbps systems where the lack of high speed measurement system remains an issue.

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