Highly photosensitive transistors in single‐crystal silicon thin films on fused silica

1984 ◽  
Vol 45 (10) ◽  
pp. 1102-1104 ◽  
Author(s):  
N. M. Johnson ◽  
A. Chiang
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Fused Silica ◽  
Crystal Silicon ◽  
Silicon Thin Films

Low cycle fatigue of single crystal silicon thin films

2007 ◽  
Vol 140 (2) ◽  
pp. 257-265 ◽  
Author(s):  
Hsien-Kuang Liu ◽  
B.J. Lee ◽  
Pang-Ping Liu
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Low Cycle Fatigue ◽  
Single Crystal Silicon ◽  
Cycle Fatigue ◽  
Crystal Silicon ◽  
Silicon Thin Films

Influence of sub-micrometer notches on the fracture of single crystal silicon thin films

2007 ◽  
Vol 30 (12) ◽  
pp. 1172-1181 ◽  
Author(s):  
X. LI ◽  
T. KASAI ◽  
S. NAKAO ◽  
T. ANDO ◽  
M. SHIKIDA ◽  
...  
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Silicon Thin Films

Structural study of TiO2 thin films by micro-Raman spectroscopy

Open Physics ◽  
2006 ◽  
Vol 4 (1) ◽  
pp. 105-116 ◽  
Author(s):  
Ahti Niilisk ◽  
Mart Moppel ◽  
Martti Pärs ◽  
Ilmo Sildos ◽  
Taavi Jantson ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Single Crystal ◽  
Anatase Phase ◽  
Single Crystal Silicon ◽  
Atomic Layer ◽  
Fused Silica ◽  
Tio2 Thin Films ◽  
Crystal Silicon ◽  
Sapphire Substrates

AbstractThe Raman spectroscopy method was used for structural characterization of TiO2 thin films prepared by atomic layer deposition (ALD) and pulsed laser deposition (PLD) on fused silica and single-crystal silicon and sapphire substrates. Using ALD, anatase thin films were grown on silica and silicon substrates at temperatures 125–425 °C. At higher deposition temperatures, mixed anatase and rutile phases grew on these substrates. Post-growth annealing resulted in anatase-to-rutile phase transitions at 750 °C in the case of pure anatase films. The films that contained chlorine residues and were amorphous in their as-grown stage transformed into anatase phase at 400 °C and retained this phase even after annealing at 900 °C. On single crystal sapphire substrates, phase-pure rutile films were obtained by ALD at 425 °C and higher temperatures without additional annealing. Thin films that predominantly contained brookite phase were grown by PLD on silica substrates using rutile as a starting material.

Temperature dependent evolution of wrinkled single-crystal silicon ribbons on shape memory polymers

Soft Matter ◽  
2017 ◽  
Vol 13 (41) ◽  
pp. 7625-7632 ◽  
Author(s):  
Yu Wang ◽  
Kai Yu ◽  
H. Jerry Qi ◽  
Jianliang Xiao
Keyword(s):  
Thin Films ◽  
Single Crystal ◽  
Shape Memory ◽  
Single Crystal Silicon ◽  
Shape Memory Polymers ◽  
Temperature Dependent ◽  
Crystal Silicon ◽  
Silicon Thin Films

Enabled by shape memory polymers (SMPs), time and temperature dependent wrinkling of single-crystal silicon thin films is demonstrated.

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