Defect microstructure in single crystal silicon thin films grown at 150° C-305° C by remote plasma-enhanced chemical vapor deposition

1990 ◽  
Vol 19 (10) ◽  
pp. 1043-1050 ◽  
Author(s):  
T. Hsu ◽  
B. Anthony ◽  
L. Breaux ◽  
R. Qian ◽  
S. Banerjee ◽  
...  
1989 ◽  
Vol 146 ◽  
Author(s):  
J.L. Crowley ◽  
J.C. Liao ◽  
P.H. Kleins ◽  
G.J. Campisi

ABSTRACTThe deposition of beta Silicon Carbide unto single crystal silicon (100) wafers using rapid thermal chemical vapor deposition (RTCVD) has been carried out using silane and ethylene as the source gases. Deposition temperatures were varid from 1100°C to 1300°C. Auger analysis revealed the silicon carbide films to be stoichiometric at all temperatures. Infrared spectroscopy data taken between 1200 cm−1 and 60° Cm−1 show the appearance of the longitudinal optical phonon at 974 cm−1 and the transverse optical phonon at 794 cm−1 in samples deposited at 1200°C and above. Stress in the films deposited on the single crystal silicon substrates is seen to go from zero or slightly compressive at 11O0°C to strongly tensile at 1300°C.


1997 ◽  
Vol 46 (10) ◽  
pp. 2015
Author(s):  
CHEN GUO ◽  
GUO XIAO-XU ◽  
ZHU MEI-FANG ◽  
SUN JING-LAN ◽  
XU HUAI-ZHE ◽  
...  

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