Defect microstructure in single crystal silicon thin films grown at 150° C-305° C by remote plasma-enhanced chemical vapor deposition
1990 ◽
Vol 19
(10)
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pp. 1043-1050
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2005 ◽
Vol 411
(1-3)
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pp. 198-202
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1990 ◽
1984 ◽
Vol 131
(11)
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pp. 2702-2708
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1987 ◽
Vol 5
(4)
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pp. 1903-1904
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