Photocurrent response times in undoped amorphous hydrogenated silicon

1986 ◽  
Vol 48 (16) ◽  
pp. 1087-1089 ◽  
Author(s):  
M. A. Parker ◽  
E. A. Schiff
Keyword(s):  
Response Times ◽  
Photocurrent Response ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

The Dangling Bond in Undoped Amorphous Hydrogenated Silicon: Trap or Recombination Center?

1986 ◽  
Vol 70 ◽  
Author(s):  
M. A. Parker ◽  
K. A. Conrad ◽  
E. A. Schiff
Keyword(s):  
Experimental Data ◽  
Response Time ◽  
Electrical Contacts ◽  
Electron Trap ◽  
Recombination Center ◽  
Photocurrent Response ◽  
Dangling Bond ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

ABSTRACTThe role of the neutral dangling bond defect upon photocarrier processes in undoped amorphous hydrogenated silicon (a-Si:H) is discussed. The evidence that the dangling bond is a simple recombination center is reviewed, and it is shown that this model does not account for photocurrent response time measurements. Experimental data pertinent to the role of electrical contacts upon response time measurements are presented, and it is concluded that contact effects do not account for response-time measurements. The possibility that the dangling bond is primarily an electron trap is discussed.

Pulsed ruby laser accelerated degradation of amorphous hydrogenated silicon

1993 ◽  
Vol 164-166 ◽  
pp. 235-238 ◽  
Author(s):  
O. Klíma ◽  
O. Štika ◽  
Ho Tha Ha ◽  
S. Fouad Abdel Hamied ◽  
J. Stuchlík ◽  
...  
Keyword(s):  
Ruby Laser ◽  
Hydrogenated Silicon ◽  
Accelerated Degradation ◽  
Amorphous Hydrogenated Silicon

Initial results and long-term clinical follow-up of an amorphous hydrogenated silicon-carbide-coated stent in daily practice

1998 ◽  
Vol 1 (2) ◽  
pp. 81-85
Author(s):  
Clara EE Hanekamp ◽  
Hans JRM Bonnier ◽  
Rolf H Michels ◽  
Kathinka H Peels ◽  
Eric PCM Heijmen ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Daily Practice ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Initial Results

scholarly journals Electrical breakdown of amorphous hydrogenated silicon rich silicon nitride thin film diodes

1996 ◽  
Vol 43 (9) ◽  
pp. 1592-1601 ◽  
Author(s):  
S.J. Bijlsma ◽  
H. van Kranenburg ◽  
K.J.B.M. Nieuwesteeg ◽  
M.G. Pitt ◽  
J.F. Verweij
Keyword(s):  
Thin Film ◽  
Silicon Nitride ◽  
Electrical Breakdown ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon
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