The Dangling Bond in Undoped Amorphous Hydrogenated Silicon: Trap or Recombination Center?

1986 ◽  
Vol 70 ◽  
Author(s):  
M. A. Parker ◽  
K. A. Conrad ◽  
E. A. Schiff
Keyword(s):  
Experimental Data ◽  
Response Time ◽  
Electrical Contacts ◽  
Electron Trap ◽  
Recombination Center ◽  
Photocurrent Response ◽  
Dangling Bond ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

ABSTRACTThe role of the neutral dangling bond defect upon photocarrier processes in undoped amorphous hydrogenated silicon (a-Si:H) is discussed. The evidence that the dangling bond is a simple recombination center is reviewed, and it is shown that this model does not account for photocurrent response time measurements. Experimental data pertinent to the role of electrical contacts upon response time measurements are presented, and it is concluded that contact effects do not account for response-time measurements. The possibility that the dangling bond is primarily an electron trap is discussed.

Assessment of Weak Si-Si Bond Breaking Mechanisms of the Staebler-Wronski Effect

1991 ◽  
Vol 219 ◽  
Author(s):  
R. Biswas ◽  
I. Kwon ◽  
C. M. Soukoulis
Keyword(s):  
Interatomic Potential ◽  
Bond Breaking ◽  
Dangling Bond ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Excited Carrier ◽  
Carrier Energy ◽  
The Stability ◽  
Staebler Wronski Effect ◽  
New Si

ABSTRACTThe mechanisms of the Staebler-Wronski effect are investigated by examining the stability of computer-generated amorphous hydrogenated silicon networks with a molecular dynamics approach. Models with both monohydride and dihydride species are examined. A new Si-H interatomic potential is utilized for the simulations. A localized excitation is used to model the non-radiative transfer of photo-excited carrier energy to the lattice. The a-Si:H model with only monohydride species is stable to bond-breaking excitations. The a-Si:H model with both monohydride and dihydride species is less stable and exhibits, after local excitations, higher energy dangling bond states that can however be easily annealed away.

Microstructure and Dangling Bond Defects in Amorphous Hydrogenated Silicon Deposited Near Room Temperature

1992 ◽  
Vol 258 ◽  
Author(s):  
Man Ken Cheung ◽  
Mark A. Petrich
Keyword(s):  
Room Temperature ◽  
Dangling Bond ◽  
Optimum Conditions ◽  
Band Tail ◽  
Hydrogenated Silicon ◽  
Photothermal Deflection Spectroscopy ◽  
Amorphous Hydrogenated Silicon ◽  
Photothermal Deflection ◽  
Substrate Temperatures ◽  
Absorption Measurements

ABSTRACTThe microstructure of high-density amorphous hydrogenated silicon (a-S.i:H) films deposited at 50°C substrate temperature was revealed by infrared (IR) and nuclear magnetic resonance (NMR) spectroscopies to be similar to that of “device-quality” a-Si:H films deposited at standard “optimum” conditions. However, optical absorption measurements of these low microstructure 50°C films with photothermal deflection spectroscopy indicate that they have higher densities of gap state defects and localized band tail states than “device-quality” films deposited at standard substrate temperatures. The correlation between the amount of microstructure and electronic properties is not unique. A low amount of microstructure is a necessary, but not sufficient, requirement for high electronic quality a-Si:H films.

Optically Induced Paramagnetism in Amorphous Hydrogenated Silicon Nitride Thin Films

1992 ◽  
Vol 242 ◽  
Author(s):  
W. L. Warren ◽  
J. Kanicki ◽  
F. C. Rong ◽  
W. R. Buchwald ◽  
M. Harmatz
Keyword(s):  
Thin Films ◽  
Silicon Nitride ◽  
Ultra Violet ◽  
Dangling Bond ◽  
Hydrogenated Silicon ◽  
Uv Illumination ◽  
Defect Centers ◽  
Amorphous Hydrogenated Silicon ◽  
The Creation ◽  
A Charge

ABSTRACTThe creation mechanisms of Si and N dangling bond defect centers in amorphous hydrogenated silicon nitride thin films by ultra-violet (UV) illumination are investigated. The creation efficiency and density of Si centers in the N-rich films are independent of illumination temperature, strongly suggesting that the creation mechanism of the spins is electronic in nature, i.e., a charge transfer mechanism. However, our results suggest that the creation of the Si dangling bond in the Si-rich films are different. Last, we find that the creation of the N dangling-bond in N-rich films can be fit to a stretched exponential time dependence, which is characteristic of dispersive charge transport.

Dangling bond in amorphous hydrogenated silicon: Anomalous spin relaxation

1986 ◽  
Vol 34 (3) ◽  
pp. 1415-1421 ◽  
Author(s):  
U. Vahalia ◽  
J. Ferrario ◽  
E. A. Schiff
Keyword(s):  
Spin Relaxation ◽  
Dangling Bond ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon

scholarly journals Solar Electricity and Recent Progress in Thin Film Photovoltaics

1984 ◽  
Vol 37 (4) ◽  
pp. 449
Author(s):  
D Haneman
Keyword(s):  
Thin Film ◽  
Cost Effective ◽  
Semiconductor Films ◽  
Major Research ◽  
Hydrogenated Silicon ◽  
Amorphous Hydrogenated Silicon ◽  
Thin Semiconductor ◽  
Thin Film Photovoltaics ◽  
Solar Electricity

Current methods of producing electricity from solar energy are summarized. The role of photovoltaics is described and the increasing importance of thin film technology. The photovoltaic industry is doing well over $108 worth of business in 1984 with a growth rate of about 50 % p.a. Already over 15 % of the output is in the form of thin films, practically all as amorphous hydrogenated silicon. A number of other thin film systems are being actively explored, most of them semiconductor heterojunctions, including CdS: Cu2S and CuInSe2 : CdS. The problems of durability and cost effective production are yielding under major research and development efforts on thin semiconductor films and interfaces.

Sign in / Sign up

Export Citation Format

Share Document