New laterally selective growth technique by metalorganic chemical vapor deposition

1986 ◽  
Vol 48 (1) ◽  
pp. 30-32 ◽  
Author(s):  
S. M. Bedair ◽  
M. A. Tischler ◽  
T. Katsuyama
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Growth ◽  
Growth Technique ◽  
Metalorganic Chemical

Growth Model of a GaN Nanorod with the Pulsed-Growth Technique of Metalorganic Chemical Vapor Deposition

2018 ◽  
Vol 18 (7) ◽  
pp. 3767-3773 ◽  
Author(s):  
Xu Zhang ◽  
Shaobo Yang ◽  
Charng-Gan Tu ◽  
Yean-Woei Kiang ◽  
C. C. Yang
Keyword(s):  
Chemical Vapor Deposition ◽  
Growth Model ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Growth Technique ◽  
Metalorganic Chemical

Monitoring of indium x-ray peak to optimize InxGa1-xN layer grown by metalorganic chemical vapor deposition

1996 ◽  
Vol 449 ◽  
Author(s):  
Hongqiang Lu ◽  
Malathi Thothathiri ◽  
Ziming Wu ◽  
Ishwara Bhat
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Quantitative Measure ◽  
Chemical Vapor ◽  
Droplet Formation ◽  
X Ray Diffraction ◽  
Growth Technique ◽  
X Ray ◽  
Metalorganic Chemical

ABSTRACTIndium droplet formation during the epitaxial growth of InxGa1-xN films is a serious problem for achieving high quality films with high indium mole fraction. In this paper, we studied the formation of indium droplets on the InxGa1-xN films grown by metalorganic chemical vapor deposition (MOCVD) using single crystal x-ray diffraction. It is found that the indium (101) peak in the x-ray diffraction spectra can be utilized as a quantitative measure to determine the amounts of indium droplets on the film. It is shown by monitoring the indium diffraction peak that the density of indium droplets increases at lower growth temperature. To suppress these indium droplets, a modulation growth technique is used. Indium droplet formation in the modulation growth is investigated and it is revealed in our study that the indium droplets problem has been partially relieved by the modulation growth technique.

Origin of Selective Growth of GaN on Maskless V-Grooved Sapphire Substrates by Metalorganic Chemical Vapor Deposition

2005 ◽  
Vol 44 (No. 31) ◽  
pp. L982-L984 ◽  
Author(s):  
Jing Wang ◽  
Li Wei Guo ◽  
Hai Qiang Jia ◽  
Zhi Gang Xing ◽  
Yang Wang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Growth ◽  
Sapphire Substrates ◽  
Metalorganic Chemical

Fabrication of GaAs arrowhead‐shaped quantum wires by metalorganic chemical vapor deposition selective growth

1993 ◽  
Vol 62 (1) ◽  
pp. 49-51 ◽  
Author(s):  
S. Tsukamoto ◽  
Y. Nagamune ◽  
M. Nishioka ◽  
Y. Arakawa
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Quantum Wires ◽  
Chemical Vapor ◽  
Selective Growth ◽  
Metalorganic Chemical

Metalorganic chemical vapor deposition selective growth and characterization of InGaN quantum dots

1999 ◽  
Vol 75 (7) ◽  
pp. 950-952 ◽  
Author(s):  
J. Wang ◽  
M. Nozaki ◽  
M. Lachab ◽  
Y. Ishikawa ◽  
R. S. Qhalid Fareed ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Growth ◽  
Metalorganic Chemical

Selective growth of GaAs wire structures by electron beam induced metalorganic chemical vapor deposition

1992 ◽  
Vol 60 (1) ◽  
pp. 68-70 ◽  
Author(s):  
T. Takahashi ◽  
Y. Arakawa ◽  
M. Nishioka ◽  
T. Ikoma
Keyword(s):  
Electron Beam ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Chemical Vapor ◽  
Selective Growth ◽  
Metalorganic Chemical
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