Deep level transient spectroscopy of hole defects in bulk‐grown p‐GaAs using Schottky barrier diodes

1986 ◽  
Vol 48 (2) ◽  
pp. 130-132 ◽  
Author(s):  
F. D. Auret ◽  
M. Nel
Keyword(s):  
Schottky Barrier ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Barrier Diodes ◽  
Transient Spectroscopy ◽  
Hole Defects

scholarly journals Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy

2017 ◽  
Vol 56 (4S) ◽  
pp. 04CG01 ◽  
Author(s):  
Philippe Ferrandis ◽  
Matthew Charles ◽  
Yannick Baines ◽  
Julien Buckley ◽  
Gennie Garnier ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Schottky Barrier Diodes ◽  
Transient Spectroscopy ◽  
Gate Recess

Correlation Between Ti-Silicided Shallow Junction Diode Leakage and Titaniun Diffusion during TISI2 Fornation

1986 ◽  
Vol 71 ◽  
Author(s):  
K. Nauka ◽  
Jun Amano ◽  
M.P. Scott ◽  
E.R. Weber ◽  
J.E. Turner ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Leakage Current ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Analytical Techniques ◽  
Deep Trap ◽  
Junction Region ◽  
Leakage Currents ◽  
Junction Diode ◽  
Transient Spectroscopy

AbstractDeep level transient spectroscopy (DLTS) in conjunction with other analytical techniques was used to establish a correlation between the leakage current in the TiSi2/p+/n-Si shallow diodes (0.25 micron) and the Ti-related Ec - 0.23 eV deep trap. It was found that Ti diffused into the junction region durin the TiSi2 formation and caused leakage currents with values up to 2 × 10−8 A/cm2. Further increases of the leakage current were related to the formation of a TiSi2/n-Si Schottky barrier.

scholarly journals Effect of the Schottky Barrier Height on the Detection of Midgap Levels in 4H-SiC by Deep Level Transient Spectroscopy

2008 ◽  
Vol 600-603 ◽  
pp. 417-420 ◽  
Author(s):  
Sergey A. Reshanov ◽  
Gerhard Pensl ◽  
Katsunori Danno ◽  
Tsunenobu Kimoto ◽  
Shigeomi Hishiki ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Barrier Height ◽  
Space Charge Region ◽  
Deep Level Transient Spectroscopy ◽  
Reverse Bias ◽  
Schottky Barrier Height ◽  
Deep Level ◽  
Peak Height ◽  
Quasi Fermi Level ◽  
Transient Spectroscopy

The effect of the Schottky barrier height on the detection of the midgap defects EH6 and EH7 in 4H-SiC by deep level transient spectroscopy (DLTS) is systematically studied. The results show that the DLTS peak height - and as a consequence the observed defect concentration - increases with the increasing barrier height and saturates above 1.5 eV for EH6 and above 1.7 eV for EH7, while below 1.1 eV the DLTS peak height completely disappears. A model is applied, which determines the position of the quasi-Fermi level in the space charge region as a function of the barrier height and of the reverse bias applied and which explains the variation of the DLTS peak height.

Sign in / Sign up

Export Citation Format

Share Document