Ion-assisted gate recess process induced damage in GaN channel of AlGaN/GaN Schottky barrier diodes studied by deep level transient spectroscopy
2017 ◽
Vol 56
(4S)
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pp. 04CG01
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2011 ◽
Vol 88
(11)
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pp. 3353-3359
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2020 ◽
Vol 62
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pp. 636-641
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2008 ◽
Vol 600-603
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pp. 417-420
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