Optical detection of interwell‐exciton transfer in In0.53Ga0.47As/InP quantum wells grown by chemical beam epitaxy

1987 ◽  
Vol 50 (16) ◽  
pp. 1077-1079 ◽  
Author(s):  
R. Sauer ◽  
T. D. Harris ◽  
W. T. Tsang
Keyword(s):  
Quantum Wells ◽  
Optical Detection ◽  
Chemical Beam Epitaxy ◽  
Exciton Transfer

Dynamics of inter- and intra-growth island exciton transfer in GaAs single quantum wells under direct picosecond optical excitation

1991 ◽  
Vol 9 (2) ◽  
pp. 251-254 ◽  
Author(s):  
Kenzo Fujiwara ◽  
Hisashi Katahama ◽  
Kyozo Kanamoto ◽  
Roberto Cingolani ◽  
Klaus Ploog
Keyword(s):  
Quantum Wells ◽  
Optical Excitation ◽  
Single Quantum ◽  
Exciton Transfer

Nonresonant radiative exciton transfer by near field between quantum wells

2013 ◽  
Vol 117 (5) ◽  
pp. 944-949 ◽  
Author(s):  
V. Ya. Aleshkin ◽  
L. V. Gavrilenko ◽  
D. M. Gaponova ◽  
A. M. Kadykov ◽  
V. G. Lysenko ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Near Field ◽  
Exciton Transfer

Optical detection of nonradiative recombination centers in AlGaN quantum wells for deep UV region

2014 ◽  
Vol 11 (3-4) ◽  
pp. 832-835 ◽  
Author(s):  
A. Z. M. Touhidul Islam ◽  
N. Murakoshi ◽  
T. Fukuda ◽  
H. Hirayama ◽  
N. Kamata
Keyword(s):  
Quantum Wells ◽  
Optical Detection ◽  
Nonradiative Recombination ◽  
Recombination Centers ◽  
Deep Uv

GaInAs/InP Quantum Wells and Strained-Layer Superlattices Grown by Chemical Beam Epitaxy

1991 ◽  
Vol 30 (Part 2, No. 2B) ◽  
pp. L228-L230 ◽  
Author(s):  
Toshi K. Uchida ◽  
Takashi Uchida ◽  
Noriyuki Yokouchi ◽  
Fumio Koyama ◽  
Kenichi Iga
Keyword(s):  
Quantum Wells ◽  
Chemical Beam Epitaxy ◽  
Strained Layer ◽  
Strained Layer Superlattices

Effects of RTA cover material on the properties of GaNAs/GaAs triple quantum wells grown by chemical beam epitaxy

2004 ◽  
Vol 269 (2-4) ◽  
pp. 229-234 ◽  
Author(s):  
Yijun Sun ◽  
Masayuki Yamamori ◽  
Takashi Egawa ◽  
Hiroyasu Ishikawa ◽  
Kazuya Mito
Keyword(s):  
Quantum Wells ◽  
Chemical Beam Epitaxy ◽  
Cover Material

Room-Temperature Observation of Excitonic Absorption in GaxIn1-xAs/InP (0.2≤x≤0.47) Quantum Wells Grown by Chemical Beam Epitaxy

1991 ◽  
Vol 30 (Part 2, No. 5B) ◽  
pp. L885-L887 ◽  
Author(s):  
Noriyuki Yokouchi ◽  
Toshikazu Uchida ◽  
Takashi Uchida ◽  
Tomoyuki Miyamoto ◽  
Fumio Koyama ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Room Temperature ◽  
Chemical Beam Epitaxy ◽  
Excitonic Absorption ◽  
Temperature Observation

Thermal Annealing of GaInNAs/GaAs Quantum Wells Grown by Chemical Beam Epitaxy and Its Effect on Photoluminescence

1999 ◽  
Vol 38 (Part 2, No. 3B) ◽  
pp. L298-L300 ◽  
Author(s):  
Takeo Kageyama ◽  
Tomoyuki Miyamoto ◽  
Shigeki Makino ◽  
Fumio Koyama ◽  
Kenichi Iga
Keyword(s):  
Quantum Wells ◽  
Thermal Annealing ◽  
Chemical Beam Epitaxy

Investigation of Roughness at InP/InAs Interfaces

1992 ◽  
Vol 280 ◽  
Author(s):  
M.J.S.P. Brasil ◽  
R. E. Nahory ◽  
M. C. Tamargo ◽  
S. Schwarz
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Mass Spectroscopy ◽  
Growth Temperature ◽  
Interface Roughness ◽  
Chemical Beam Epitaxy ◽  
Photoluminescence Spectra ◽  
Multiple Line ◽  
Secondary Ion ◽  
Low Temperature Photoluminescence

ABSTRACTWe have investigated the interface roughness of single thin InP/InAs quantum wells grown by Chemical Beam Epitaxy. We report results of low temperature photoluminescence and secondary ion mass spectroscopy. The interface roughness is characterized by multiple-line photoluminescence spectra and is very sensitive to parameters such as the growth temperature. Details of the interface roughness are discussed based on the shifts of the excitonic energies observed by photoluminescence.

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