Temperature dependence of hydrogen vibrational modes in passivated boron‐doped silicon

1987 ◽  
Vol 51 (18) ◽  
pp. 1413-1415 ◽  
Author(s):  
M. Stutzmann ◽  
C. P. Herrero
Keyword(s):  
Temperature Dependence ◽  
Vibrational Modes ◽  
Boron Doped ◽  
Doped Silicon

TEMPERATURE DEPENDENCE OF ABSORPTION LINE WIDTH IN BORON-DOPED SILICON

1962 ◽  
Vol 40 (10) ◽  
pp. 1436-1442 ◽  
Author(s):  
Konrad Colbow ◽  
J. W. Bichard ◽  
J. C. Giles
Keyword(s):  
Low Temperature ◽  
Optical Absorption ◽  
Temperature Dependence ◽  
Absorption Line ◽  
Excited States ◽  
Half Width ◽  
Boron Doped ◽  
Doped Silicon ◽  
Spectrometer Slit ◽  
Proper Allowance

In boron-doped silicon, optical absorption takes place through the excitation of bound holes from the ground to excited states. This leads to a line spectrum. Due to a lack of sufficient resolution and a failure to make proper allowance for line distortion by the finite spectrometer slit width, previous authors gave incorrect values for both the low temperature half-width and the temperature dependence of this half-width. In re-evaluating these quantities, two of three previously known lines were found to be doublets. It is found that presently available theory does not explain the results adequately.

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Single-charge tunneling in uncoupled boron-doped silicon nanochains

2010 ◽  
Vol 484 (4-6) ◽  
pp. 258-260 ◽  
Author(s):  
D.D.D. Ma ◽  
K.S. Chan ◽  
D.M. Chen ◽  
S.T. Lee
Keyword(s):  
Single Charge ◽  
Boron Doped ◽  
Doped Silicon ◽  
Charge Tunneling

Stability Study of Silicon Heterojunction Solar cells fabricated with Gallium‐ and Boron‐doped Silicon Wafers

Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  
Keyword(s):  
Solar Cells ◽  
Stability Study ◽  
Silicon Wafers ◽  
Heterojunction Solar Cells ◽  
Boron Doped ◽  
Doped Silicon ◽  
Silicon Heterojunction Solar Cells

Recording and storage of information in boron-doped silicon using YAG:Nd laser

1995 ◽  
Author(s):  
Juris Blums ◽  
Arthur Medvids
Keyword(s):  
Boron Doped ◽  
Doped Silicon ◽  
And Storage

Temperature dependence of the normal vibrational modes of hcp Zr

1978 ◽  
Vol 18 (6) ◽  
pp. 2632-2642 ◽  
Author(s):  
C. Stassis ◽  
J. Zarestky ◽  
D. Arch ◽  
O. D. McMasters ◽  
B. N. Harmon
Keyword(s):  
Temperature Dependence ◽  
Vibrational Modes ◽  
Normal Vibrational Modes

Dynamic characteristics of dislocations in highly boron-doped silicon

2001 ◽  
Vol 89 (10) ◽  
pp. 5788-5790 ◽  
Author(s):  
I. Yonenaga ◽  
T. Taishi ◽  
X. Huang ◽  
K. Hoshikawa
Keyword(s):  
Dynamic Characteristics ◽  
Boron Doped ◽  
Doped Silicon

Evaluation of Residual Stresses in Thin Films by Means of Micro-Raman Spectroscopy

1997 ◽  
Vol 505 ◽  
Author(s):  
Kazuyuki Mizuhara ◽  
Shinichi Takahashi ◽  
Jyunichi Kurokawa ◽  
Noboru Morita ◽  
Yoshitaro Yoshida
Keyword(s):  
Raman Spectroscopy ◽  
Temperature Effects ◽  
Simultaneous Observation ◽  
Stress Evaluation ◽  
Advantages And Disadvantages ◽  
Micro Raman Spectroscopy ◽  
Boron Doped ◽  
Doped Silicon ◽  
Fluid Cooling ◽  
Anti Stokes

ABSTRACTThe effects of temperatures on the stress evaluation of boron doped silicon in solid and film forms are investigated. Several techniques, such as fluid cooling to eliminate the temperature raise and/or simultaneous observation of Stokes and anti Stokes peaks to compensate the temperature effects, are applied. The advantages and disadvantages of each method and the abilities and limits of these techniques are discussed.

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