Phonon model of heat radiation into superfluid helium by a solid with a flat surface

2021 ◽  
Vol 47 (8) ◽  
pp. 646-651
Author(s):  
I. N. Adamenko ◽  
E. K. Nemchenko ◽  
K. E. Nemchenko
Author(s):  
Chang Shen ◽  
Phil Fraundorf ◽  
Robert W. Harrick

Monolithic integration of optoelectronic integrated circuits (OEIC) requires high quantity etched laser facets which prevent the developing of more-highly-integrated OEIC's. The causes of facet roughness are not well understood, and improvement of facet quality is hampered by the difficulty in measuring the surface roughness. There are several approaches to examining facet roughness qualitatively, such as scanning force microscopy (SFM), scanning tunneling microscopy (STM) and scanning electron microscopy (SEM). The challenge here is to allow more straightforward monitoring of deep vertical etched facets, without the need to cleave out test samples. In this presentation, we show air based STM and SFM images of vertical dry-etched laser facets, and discuss the image acquisition and roughness measurement processes. Our technique does not require precision cleaving. We use a traditional tip instead of the T shape tip used elsewhere to preventing “shower curtain” profiling of the sidewall. We tilt the sample about 30 to 50 degrees to avoid the curtain effect.


Author(s):  
B. R. Ahn ◽  
N. J. Kim

High energy approximation in dynamic theory of electron diffraction involves some intrinsic problems. First, the loss of theoretical strictness makes it difficult to comprehend the phenomena of electron diffraction. Secondly, it is difficult to believe that the approximation is reasonable especially in the following cases: 1) when accelerating voltage is not sufficiently high, 2) when the specimen is thick, 3) when the angle between the surface normal of the specimen and zone axis is large, and 4) when diffracted beam with large diffraction angle is included in the calculation. However, until now the method to calculate the many beam dynamic electron diffraction without the high energy approximation has not been proposed. For this reason, the authors propose a method to eliminate the high energy approximation in the calculation of many beam dynamic electron diffraction. In this method, a perfect crystal with flat surface was assumed. The method was applied to the calculation of [111] zone axis CBED patterns of Si.


Author(s):  
Yoshinori Fujiyoshi

The resolution of direct images of biological macromolecules is normally restricted to far less than 0.3 nm. This is not due instrumental resolution, but irradiation damage. The damage to biological macromolecules may expect to be reduced when they are cooled to a very low temperature. We started to develop a new cryo-stage for a high resolution electron microscopy in 1983, and successfully constructed a superfluid helium stage for a 400 kV microscope by 1986, whereby chlorinated copper-phthalocyanine could be photographed to a resolution of 0.26 nm at a stage temperature of 1.5 K. We are continuing to develop the cryo-microscope and have developed a cryo-microscope equipped with a superfluid helium stage and new cryo-transfer device.The New cryo-microscope achieves not only improved resolution but also increased operational ease. The construction of the new super-fluid helium stage is shown in Fig. 1, where the cross sectional structure is shown parallel to an electron beam path. The capacities of LN2 tank, LHe tank and the pot are 1400 ml, 1200 ml and 3 ml, respectively. Their surfaces are placed with gold to minimize thermal radiation. Consumption rates of liquid nitrogen and liquid helium are 170 ml/hour and 140 ml/hour, respectively. The working time of this stage is more than 7 hours starting from full LN2 and LHe tanks. Instrumental resolution of our cryo-stage cooled to 4.2 K was confirmed to be 0.20 nm by an optical diffraction pattern from the image of a chlorinated copper-phthalocyanine crystal. The image and the optical diffraction pattern are shown in Fig. 2 a, b, respectively.


1978 ◽  
Vol 39 (C6) ◽  
pp. C6-35-C6-36 ◽  
Author(s):  
J. M. Parpia ◽  
D. J. Sandiford ◽  
J. E. Berthold ◽  
J. D. Reppy

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