Leakage current characteristics and DC resistance degradation mechanisms in Nb doped PZT films

2021 ◽  
Vol 129 (17) ◽  
pp. 174102
Author(s):  
Betul Akkopru-Akgun ◽  
Thorsten J. M. ◽  
Kosuke Tsuji ◽  
Ke Wang ◽  
Clive A. Randall ◽  
...  
Keyword(s):  
Leakage Current ◽  
Degradation Mechanisms ◽  
Pzt Films ◽  
Resistance Degradation ◽  
Current Characteristics ◽  
Dc Resistance

scholarly journals Polarity dependent DC resistance degradation and electrical breakdown in Nb doped PZT films

APL Materials ◽  
2019 ◽  
Vol 7 (12) ◽  
pp. 120901 ◽  
Author(s):  
Betul Akkopru-Akgun ◽  
Wanlin Zhu ◽  
Clive A. Randall ◽  
Michael T. Lanagan ◽  
Susan Trolier-McKinstry
Keyword(s):  
Electrical Breakdown ◽  
Pzt Films ◽  
Resistance Degradation ◽  
Dc Resistance

Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term Reliability

2005 ◽  
Vol 483-485 ◽  
pp. 925-928 ◽  
Author(s):  
Roland Rupp ◽  
Michael Treu ◽  
Peter Türkes ◽  
H. Beermann ◽  
Thomas Scherg ◽  
...  
Keyword(s):  
Leakage Current ◽  
Power Dissipation ◽  
Schottky Diodes ◽  
Physical Structure ◽  
Active Area ◽  
Clear Correlation ◽  
Local Power ◽  
Degradation Mechanisms ◽  
Failure Simulation

Other than open micropipes (MP), overgrown micropipes do not necessarily lead to a^significantly reduced blocking capability of the affected SiC device. However they can lead to a degradation of the device during operation. In this paper the physical structure of overgrown micropipes will be revealed and their contribution to the leakage current will be shown. The possible impact of the high local power dissipation in the surrounding of the overgrown micropipe will be discussed and long term degradation mechanisms will be described. Failure simulation under laboratory conditions shows a clear correlation between the position of overgrown micropipes and the location of destructive burnt spots.

Electrical Properties of Srta2O6 Thin Films Deposited by Plasma Enhanced Atomic Layer Deposition (Peald)

2001 ◽  
Vol 685 ◽  
Author(s):  
Won-Jae Lee ◽  
Chang-Ho Shin ◽  
In-Kyu You ◽  
Il-Suk Yang ◽  
Sang-Ouk Ryu ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Leakage Current ◽  
Annealing Temperature ◽  
Atomic Layer ◽  
Si Substrates ◽  
Annealing Temperatures ◽  
Layer Deposition ◽  
Current Characteristics

AbstractThe SrTa2O6 (STO) thin films were prepared by plasma enhanced atomic layer deposition (PEALD) with alternating supply of reactant sources, Sr[Ta(C2H5O)5(C4H10NO)]2 {Strontium bis-[tantalum penta-ethoxide dimethyllaminoethoxide]; Sr(Ta(OEt)5▪dmae)2} and O2plasma. It was observed that the uniform and conformal STO thin films were successfully deposited using PEALD and the film thickness per cycle was saturated at about 0.8 nm at 300°C. Electrical properties of SrTa2O6 (STO) thin films prepared on Pt/SiO2/Si substrates with annealing temperatures have been investigated. While the grain size and dielectric constant of STO films increased with increasing annealing temperature, the leakage current characteristics of STO films slightly deteriorated. The leakage current density of a 40nm-STO film was about 5×10−8A/cm2 at 3V.

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