InAsSb-based detectors on GaSb for near-room-temperature operation in the mid-wave infrared

A. P. Craig; V. Letka; M. Carmichael; T. Golding; A. R. Marshall

doi:10.1063/5.0051049

InAsSb-based detectors on GaSb for near-room-temperature operation in the mid-wave infrared

Applied Physics Letters ◽

10.1063/5.0051049 ◽

2021 ◽

Vol 118 (25) ◽

pp. 251103

Author(s):

A. P. Craig ◽

V. Letka ◽

M. Carmichael ◽

T. Golding ◽

A. R. Marshall

Keyword(s):

Room Temperature ◽

Room Temperature Operation

Room-Temperature Operation of Silicon Single-Electron Transistor Fabricated Using Optical Lithography

IEEE Transactions on Nanotechnology ◽

10.1109/tnano.2010.2086475 ◽

2011 ◽

Vol 10 (1) ◽

pp. 96-98 ◽

Cited By ~ 23

Author(s):

Yongshun Sun ◽

Rusli ◽

Navab Singh

Keyword(s):

Room Temperature ◽

Optical Lithography ◽

Single Electron ◽

Single Electron Transistor ◽

Room Temperature Operation

Room temperature operation and DC characteristics of InAlN/GaN/AlGaN Hot Electron Transistors with common base transfer ratio, α = 0.97

68th Device Research Conference ◽

10.1109/drc.2010.5551877 ◽

2010 ◽

Author(s):

Sansaptak Dasgupta ◽

Nidhi ◽

A. Raman ◽

J.S. Speck ◽

Umesh K. Mishra

Keyword(s):

Room Temperature ◽

Hot Electron ◽

Transfer Ratio ◽

Dc Characteristics ◽

Common Base ◽

Electron Transistors ◽

Room Temperature Operation

Room Temperature Operation of an In-Plane Half-Adder Based on Ballistic Y–Junctions

IEEE Electron Device Letters ◽

10.1109/led.2004.831225 ◽

2004 ◽

Vol 25 (7) ◽

pp. 462-464 ◽

Cited By ~ 17

Author(s):

S. Reitzenstein ◽

L. Worschech ◽

A. Forchel

Keyword(s):

Room Temperature ◽

Half Adder ◽

Room Temperature Operation

Room-temperature operation of an exclusive-OR circuit using a highly doped Si single-electron transistor

Applied Physics Letters ◽

10.1063/1.1894594 ◽

2005 ◽

Vol 86 (12) ◽

pp. 123118 ◽

Cited By ~ 30

Author(s):

Tetsuya Kitade ◽

Kensaku Ohkura ◽

Anri Nakajima

Keyword(s):

Room Temperature ◽

Single Electron ◽

Single Electron Transistor ◽

Exclusive Or ◽

Room Temperature Operation

Room temperature operation of a GaAs tristate switch with a double triangular barrier structure

Journal of Materials Science Materials in Electronics ◽

10.1007/bf00186192 ◽

1994 ◽

Vol 5 (4) ◽

Author(s):

K.F. Yarn ◽

Y.H. Wang

Keyword(s):

Room Temperature ◽

Barrier Structure ◽

Room Temperature Operation

Development of 4V-Class Bulk-Type All-Solid-State Lithium Rechargeable Batteries by a Combined Use of Complex Hydride and Sulfide Electrolytes for Room Temperature Operation

MATERIALS TRANSACTIONS ◽

10.2320/matertrans.m2017022 ◽

2017 ◽

Vol 58 (7) ◽

pp. 1063-1068 ◽

Cited By ~ 7

Author(s):

Atsushi Unemoto ◽

Genki Nogami ◽

Masaru Tazawa ◽

Mitsugu Taniguchi ◽

Shin-ichi Orimo

Keyword(s):

Solid State ◽

Room Temperature ◽

Rechargeable Batteries ◽

Complex Hydride ◽

Lithium Rechargeable Batteries ◽

Combined Use ◽

Room Temperature Operation

First room temperature operation of the AURIGA optical readout

Classical and Quantum Gravity ◽

10.1088/0264-9381/19/7/393 ◽

2002 ◽

Vol 19 (7) ◽

pp. 1919-1924 ◽

Cited By ~ 14

Author(s):

M De Rosa ◽

L Baggio ◽

M Cerdonio ◽

L Conti ◽

G Galet ◽

...

Keyword(s):

Room Temperature ◽

Optical Readout ◽

Room Temperature Operation

High-average power, room temperature operation of PPMgLN OPO

Conference on Lasers and Electro-Optics (CLEO 2000). Technical Digest. Postconference Edition. TOPS Vol.39 (IEEE Cat. No.00CH37088) ◽

10.1109/cleo.2000.907495 ◽

2000 ◽

Author(s):

Y. Hirano ◽

S. Yamamoto ◽

T. Tajime ◽

R. Taniguchi ◽

M. Nakamura

Keyword(s):

Room Temperature ◽

Average Power ◽

High Average Power ◽

Room Temperature Operation

Optimization of 1.3 µm GaAs-based oxide-confined (GaIn)(NAs) vertical-cavity surface-emitting lasers for low-threshold room-temperature operation

Journal of Physics Condensed Matter ◽

10.1088/0953-8984/16/31/009 ◽

2004 ◽

Vol 16 (31) ◽

pp. S3121-S3140 ◽

Cited By ~ 43

Author(s):

Robert P Sarza a ◽

W odzimierz Nakwaski

Keyword(s):

Room Temperature ◽

Cavity Surface ◽

Surface Emitting Lasers ◽

Vertical Cavity Surface ◽

Low Threshold ◽

Emitting Lasers ◽

Vertical Cavity ◽

Room Temperature Operation

Room Temperature Operation of Visible (λ =658.6 nm) InGaAsP DH Laser Diodes on GaAsP

Japanese Journal of Applied Physics ◽

10.1143/jjap.24.l551 ◽

1985 ◽

Vol 24 (Part 2, No. 7) ◽

pp. L551-L552 ◽

Cited By ~ 10

Author(s):

Sadao Fujii ◽

Shiro Sakai ◽

Masayoshi Umeno

Keyword(s):

Room Temperature ◽

Laser Diodes ◽

Room Temperature Operation