High-resolution planar electron beam induced current in bulk diodes using high-energy electrons

2021 ◽  
Vol 119 (1) ◽  
pp. 014103
Author(s):  
Zoey Warecki ◽  
Andrew A. Allerman ◽  
Andrew M. Armstrong ◽  
A. Alec Talin ◽  
John Cumings
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
High Energy ◽  
Induced Current ◽  
High Energy Electrons ◽  
Electron Beam Induced Current ◽  
Planar Electron

3-Dimensional Non-Destructive Dislocation Analyses in SiC Measured by Planar Electron-Beam-Induced Current Method

2006 ◽  
pp. 423-426
Author(s):  
Y. Yanagisawa ◽  
Tomoaki Hatayama ◽  
Hiroshi Yano ◽  
Yukiharu Uraoka ◽  
Takashi Fuyuki
Keyword(s):  
Electron Beam ◽  
Current Method ◽  
Induced Current ◽  
3 Dimensional ◽  
Electron Beam Induced Current ◽  
Planar Electron ◽  
Non Destructive

High-resolution electron-beam-induced-current study of the defect structure in GaN epilayers

2002 ◽  
Vol 14 (48) ◽  
pp. 13285-13290 ◽  
Author(s):  
N M Shmidt ◽  
O A Soltanovich ◽  
A S Usikov ◽  
E B Yakimov ◽  
E E Zavarin
Keyword(s):  
Electron Beam ◽  
High Resolution ◽  
Defect Structure ◽  
Induced Current ◽  
Resolution Electron ◽  
Electron Beam Induced Current

Electron beam induced current study of thin silicon layers on insulator substrate

1990 ◽  
Vol 48 (4) ◽  
pp. 618-619
Author(s):  
A. Buczkowski ◽  
Z. J. Radzimski ◽  
J. C. Russ ◽  
G. A. Rozgonyi
Keyword(s):  
Electron Beam ◽  
Energy Loss ◽  
Beam Energy ◽  
Collection Efficiency ◽  
Silicon Layer ◽  
Depletion Layer ◽  
Incident Electron Energy ◽  
Induced Current ◽  
Electron Hole ◽  
Electron Beam Induced Current

If a thickness of a semiconductor is smaller than the penetration depth of the electron beam, e.g. in silicon on insulator (SOI) structures, only a small portion of incident electrons energy , which is lost in a superficial silicon layer separated by the oxide from the substrate, contributes to the electron beam induced current (EBIC). Because the energy loss distribution of primary beam is not uniform and varies with beam energy, it is not straightforward to predict the optimum conditions for using this technique. Moreover, the energy losses in an ohmic or Schottky contact complicate this prediction. None of the existing theories, which are based on an assumption of a point-like region of electron beam generation, can be used satisfactorily on SOI structures. We have used a Monte Carlo technique which provide a simulation of the electron beam interactions with thin multilayer structures. The EBIC current was calculated using a simple one dimensional geometry, i.e. depletion layer separating electron- hole pairs spreads out to infinity in x- and y-direction. A point-type generation function with location being an actual location of an incident electron energy loss event has been assumed. A collection efficiency of electron-hole pairs was assumed to be 100% for carriers generated within the depletion layer, and inversely proportional to the exponential function of depth with the effective diffusion length as a parameter outside this layer. A series of simulations were performed for various thicknesses of superficial silicon layer. The geometries used for simulations were chosen to match the "real" samples used in the experimental part of this work. The theoretical data presented in Fig. 1 show how significandy the gain decreases with a decrease in superficial layer thickness in comparison with bulk material. Moreover, there is an optimum beam energy at which the gain reaches its maximum value for particular silicon thickness.

Electron beam recording in SiO2with direct read-out using the electron beam induced current at a p-n junction

1967 ◽  
Vol 55 (5) ◽  
pp. 728-729 ◽  
Author(s):  
C.J. Varker ◽  
E.M. Juleff
Keyword(s):  
Electron Beam ◽  
Induced Current ◽  
Electron Beam Induced Current

Scanning light spot scan and electron-beam-induced current studies of CdS/CuxS solar cells formed on rough and smooth single-crystal CdS substrates

Solar Cells ◽  
1983 ◽  
Vol 10 (3) ◽  
pp. 287-294 ◽  
Author(s):  
C.H. Cheng ◽  
B. Merritt ◽  
C.W. Tu ◽  
K.A. Jones
Keyword(s):  
Electron Beam ◽  
Solar Cells ◽  
Single Crystal ◽  
Light Spot ◽  
Induced Current ◽  
Electron Beam Induced Current
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