Homotopy Phases of FQHE with Long-Range Quantum Entanglement in Monolayer and Bilayer Hall Systems

Correlated phases in Hall systems have topological character. Multilayer configurations of planar electron systems create the opportunity to change topological phases on demand using macroscopic factors, such as vertical voltage. We present an analysis of such phenomena in close relation to recent experiments with multilayer Hall setups including GaAs and graphene multi-layers. The consequences of the blocking or not of the inter-layer electron tunneling in stacked Hall configurations are analyzed and presented in detail. Multilayer Hall systems are thus tunable topological composite nanomaterials, in the case of graphene-stacked systems by both intra- and inter-layer voltage.

Electron phase-space hole transverse instability at high magnetic field

Analytic treatment is presented of the electrostatic instability of an initially planar electron hole in a plasma of effectively infinite particle magnetization. It is shown that there is an unstable mode consisting of a rigid shift of the hole in the trapping direction. Its low frequency is determined by the real part of the force balance between the Maxwell stress arising from the transverse wavenumber $k$ and the kinematic jetting from the hole’s acceleration. The very low growth rate arises from a delicate balance in the imaginary part of the force between the passing-particle jetting, which is destabilizing, and the resonant response of the trapped particles, which is stabilizing. Nearly universal scalings of the complex frequency and $k$ with hole depth are derived. Particle in cell simulations show that the slow-growing instabilities previously investigated as coupled hole–wave phenomena occur at the predicted frequency, but with growth rates 2 to 4 times greater than the analytic prediction. This higher rate may be caused by a reduced resonant stabilization because of numerical phase-space diffusion in the simulations.

Hybrid Monte Carlo source model: Advantages and deficiencies

Monte Carlo (MC) simulation is the gold standard for dose calculation. An accurate mathematical source model can be used for the radiation beams. Source models can consist of sub-sources or fewer sources with data that need to be measured. This can speed up treatment plan verification without the need for a full simulation of the radiation treatment machine. Aims: This study aimed to construct a novel hybrid source model for 6 MV photon beams for an Elekta Synergy accelerator and to commission it against measured beam data and treatments plans. Methods and Material: The model comprised of a circular photon and planar electron contamination source. The modified Schiff formula provided off-axis variable bremsstrahlung spectra. Collimation and scatter were modelled with error functions. An exponential function modelled the transmitted fluence through the collimators. The source model was commissioned by comparing simulated and measured MC data. Dose data included profiles, depth dose and film measurements in a Rando phantom. Field sizes ranged from 1 × 1 cm2 to 40 × 40 cm2. Results: Regular, wedged and asymmetrical fields could be modelled within 1.5% or 1.5 mm. More than 95% of all points lie within 3% or 3 mm for the multi-leaf collimators contours data. A gamma criterion of 3% or 3 mm was met for a complex treatment case. Conclusions: The two sub-source model replicated clinical 6 MV Elekta Synergy photons beams and could calculate the dose accurately for conformal treatments in complex geometries such as a head-and-neck case.

Compact layer free mixed-cation lead mixed-halide perovskite solar cells

Thickness-tunable and compact FA0.83Cs0.17Pb(I0.6Br0.4)3 perovskite thin films are achieved with a large grain size up to 12 microns. They are then employed to fabricate planar electron-transport-layer-free solar cells.

Fluorination increases the electron mobility of zinc azadipyrromethene-based electron acceptors and enhances the performance of fullerene-free organic solar cells

Strategic fluorination of non-planar electron acceptors reduces bimolecular recombination in OPVs and significantly enhances the electron mobility to ∼10−3 cm2 V−1 s−1 in diodes.