scholarly journals Ge doping of β-Ga2O3 by MOCVD

APL Materials ◽  
2021 ◽  
Vol 9 (9) ◽  
pp. 091102
Author(s):  
Fikadu Alema ◽  
George Seryogin ◽  
Alexei Osinsky ◽  
Andrei Osinsky
Keyword(s):  
Ge Doping

Suppression of a possible spin-density wave transition in Cr2GaN by Ge doping

2015 ◽  
Vol 95 (25) ◽  
pp. 2831-2837 ◽  
Author(s):  
Yufeng Li ◽  
Jianzhong Liu ◽  
Wenhao Liu ◽  
Xiyu Zhu ◽  
Hai-Hu Wen
Keyword(s):  
Spin Density ◽  
Density Wave ◽  
Spin Density Wave ◽  
Ge Doping

On the role of Ge-doping concentration in the refractive index rollover and thermal annealing characteristics of type IIa fiber Bragg gratings

2014 ◽  
Vol 53 (11) ◽  
pp. 117103
Author(s):  
Jitendra Kumar ◽  
Om Prakash ◽  
Ramakant Mahakud ◽  
Sachin Kumar Agrawal ◽  
Sudhir K. Dixit ◽  
...  
Keyword(s):  
Refractive Index ◽  
Thermal Annealing ◽  
Doping Concentration ◽  
Fiber Bragg Gratings ◽  
Bragg Gratings ◽  
Ge Doping

Tetragonal Phase in Ge Doped HfO2 Films on Si Investigated by X-ray Absorption Spectroscopy

2009 ◽  
Vol 1194 ◽  
Author(s):  
Leonardo Miotti ◽  
Karen Paz Bastos ◽  
Cláudio Radtke ◽  
Gerald Lucovsky
Keyword(s):  
Absorption Spectroscopy ◽  
Tetragonal Phase ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Rapid Thermal Anneal ◽  
X Ray ◽  
X Ray Absorption ◽  
Ge Doping

AbstractThe stabilization of the tetragonal phase of 5 nm thick HfO2 films by Ge doping is investigated using x-ray absorption spectroscopy around O and Ge Kedges and by Rutherford backscattering spectrometry. We show that Ge concentrations higher than ˜5at.% are not stable during rapid thermal anneal at temperatures as low as 750°C and that the tetragonal phase of HfO2 is achieved at this Ge concentration.

The effects of Ge doping on the thermoelectric performance of p-type polycrystalline SnSe

RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114825-114829 ◽  
Author(s):  
Tessera Alemneh Wubieneh ◽  
Cheng-Lung Chen ◽  
Pai Chun Wei ◽  
Szu-Yuan Chen ◽  
Yang-Yuan Chen
Keyword(s):  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type ◽  
Ge Doping

Ge doping enables to enhance the thermoelectric figure of merit of SnSe..

Effect of Ge-doping and pressure in the vicinity of the QCP of YbRh2Si2

2002 ◽  
Vol 312-313 ◽  
pp. 401-402 ◽  
Author(s):  
O. Trovarelli ◽  
J. Custers ◽  
P. Gegenwart ◽  
C. Geibel ◽  
P. Hinze ◽  
...  
Keyword(s):  
Ge Doping

Magnetic and volume properties in CeRu2Si2 with low Ge doping

1996 ◽  
Vol 46 (S4) ◽  
pp. 2073-2074 ◽  
Author(s):  
Pierre Haen ◽  
Hamid Bioud ◽  
Serge Zherlitsyn ◽  
Stefan Holtmeier ◽  
Pascal Lejay ◽  
...  
Keyword(s):  
Volume Properties ◽  
Ge Doping

Effect of Ge doping on the electrical properties of amorphous Zn–Sn–O thin films

2020 ◽  
Vol 20 (9) ◽  
pp. 1041-1048
Author(s):  
Abhishek Sharma ◽  
Rahim Abdur ◽  
Dami Kim ◽  
Awnish Kumar Tripathi ◽  
Son Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ge Doping
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