Effect of Ge-doping and pressure in the vicinity of the QCP of YbRh2Si2

2002 ◽  
Vol 312-313 ◽  
pp. 401-402 ◽  
Author(s):  
O. Trovarelli ◽  
J. Custers ◽  
P. Gegenwart ◽  
C. Geibel ◽  
P. Hinze ◽  
...  
Keyword(s):  
Ge Doping

Suppression of a possible spin-density wave transition in Cr2GaN by Ge doping

2015 ◽  
Vol 95 (25) ◽  
pp. 2831-2837 ◽  
Author(s):  
Yufeng Li ◽  
Jianzhong Liu ◽  
Wenhao Liu ◽  
Xiyu Zhu ◽  
Hai-Hu Wen
Keyword(s):  
Spin Density ◽  
Density Wave ◽  
Spin Density Wave ◽  
Ge Doping

On the role of Ge-doping concentration in the refractive index rollover and thermal annealing characteristics of type IIa fiber Bragg gratings

2014 ◽  
Vol 53 (11) ◽  
pp. 117103
Author(s):  
Jitendra Kumar ◽  
Om Prakash ◽  
Ramakant Mahakud ◽  
Sachin Kumar Agrawal ◽  
Sudhir K. Dixit ◽  
...  
Keyword(s):  
Refractive Index ◽  
Thermal Annealing ◽  
Doping Concentration ◽  
Fiber Bragg Gratings ◽  
Bragg Gratings ◽  
Ge Doping

Tetragonal Phase in Ge Doped HfO2 Films on Si Investigated by X-ray Absorption Spectroscopy

2009 ◽  
Vol 1194 ◽  
Author(s):  
Leonardo Miotti ◽  
Karen Paz Bastos ◽  
Cláudio Radtke ◽  
Gerald Lucovsky
Keyword(s):  
Absorption Spectroscopy ◽  
Tetragonal Phase ◽  
Rutherford Backscattering Spectrometry ◽  
Rutherford Backscattering ◽  
Rapid Thermal Anneal ◽  
X Ray ◽  
X Ray Absorption ◽  
Ge Doping

AbstractThe stabilization of the tetragonal phase of 5 nm thick HfO2 films by Ge doping is investigated using x-ray absorption spectroscopy around O and Ge Kedges and by Rutherford backscattering spectrometry. We show that Ge concentrations higher than ˜5at.% are not stable during rapid thermal anneal at temperatures as low as 750°C and that the tetragonal phase of HfO2 is achieved at this Ge concentration.

The effects of Ge doping on the thermoelectric performance of p-type polycrystalline SnSe

RSC Advances ◽  
2016 ◽  
Vol 6 (115) ◽  
pp. 114825-114829 ◽  
Author(s):  
Tessera Alemneh Wubieneh ◽  
Cheng-Lung Chen ◽  
Pai Chun Wei ◽  
Szu-Yuan Chen ◽  
Yang-Yuan Chen
Keyword(s):  
Figure Of Merit ◽  
Thermoelectric Performance ◽  
Thermoelectric Figure Of Merit ◽  
Thermoelectric Figure ◽  
P Type ◽  
Ge Doping

Ge doping enables to enhance the thermoelectric figure of merit of SnSe..

Magnetic and volume properties in CeRu2Si2 with low Ge doping

1996 ◽  
Vol 46 (S4) ◽  
pp. 2073-2074 ◽  
Author(s):  
Pierre Haen ◽  
Hamid Bioud ◽  
Serge Zherlitsyn ◽  
Stefan Holtmeier ◽  
Pascal Lejay ◽  
...  
Keyword(s):  
Volume Properties ◽  
Ge Doping

Effect of Ge doping on the electrical properties of amorphous Zn–Sn–O thin films

2020 ◽  
Vol 20 (9) ◽  
pp. 1041-1048
Author(s):  
Abhishek Sharma ◽  
Rahim Abdur ◽  
Dami Kim ◽  
Awnish Kumar Tripathi ◽  
Son Singh ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Ge Doping

scholarly journals Thermal neutron transmutation doping of GaN semiconductors

2020 ◽  
Vol 10 (1) ◽  
Author(s):  
R. Barber ◽  
Q. Nguyen ◽  
J. Brockman ◽  
J. Gahl ◽  
J. Kwon
Keyword(s):  
Doping Concentration ◽  
Gamma Ray ◽  
High Quality ◽  
Neutron Transmutation Doping ◽  
Transmutation Doping ◽  
Sims Analysis ◽  
Neutron Transmutation ◽  
First Time ◽  
Ge Doping ◽  
Uniform Doping

Abstract High quality Ge doping of GaN is demonstrated using primarily thermal neutrons for the first time. In this study, GaN was doped with Ge to concentrations from 1016 Ge atoms/cm3 to 1018 Ge atoms/cm3. The doping concentrations were measured using gamma-ray spectroscopy and confirmed using SIMS analysis. The data from SIMS analysis also show consistent Ge doping concentration throughout the depth of the GaN wafers. After irradiation, the GaN was annealed in a nitrogen environment at 950 °C for 30 min. The neutron doping process turns out to produce spatially uniform doping throughout the whole volume of the GaN substrate.

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