Hybrid memory characteristics of NbOx threshold switching devices

2021 ◽  
Vol 119 (9) ◽  
pp. 092102
Author(s):  
Sangmin Lee ◽  
Hyunsang Hwang ◽  
Jiyong Woo
Keyword(s):  
Hybrid Memory ◽  
Threshold Switching ◽  
Memory Characteristics ◽  
Switching Devices

Scaling behavior of oxide-based electrothermal threshold switching devices

Nanoscale ◽  
2017 ◽  
Vol 9 (37) ◽  
pp. 14139-14148 ◽  
Author(s):  
Dasheng Li ◽  
Jonathan M. Goodwill ◽  
James A. Bain ◽  
Marek Skowronski
Keyword(s):  
Transition Metal ◽  
Metal Oxides ◽  
Transition Metal Oxides ◽  
Scaling Behavior ◽  
Switching Behavior ◽  
Threshold Switching ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
Switching Devices

Materials exhibiting insulator to metal transition (IMT) and transition metal oxides showing threshold switching behavior are considered as promising candidates for selector devices for crossbar non-volatile memory application.

Various Threshold Switching Devices for Integrate and Fire Neuron Applications

2019 ◽  
Vol 5 (9) ◽  
pp. 1800866 ◽  
Author(s):  
Donguk Lee ◽  
Myonghoon Kwak ◽  
Kibong Moon ◽  
Wooseok Choi ◽  
Jaehyuk Park ◽  
...  
Keyword(s):  
Integrate And Fire ◽  
Threshold Switching ◽  
Integrate And Fire Neuron ◽  
Switching Devices

Capacitance discharge in VO2 threshold switching devices

1972 ◽  
Vol 10 (12) ◽  
pp. 1277-1280 ◽  
Author(s):  
G. Adam ◽  
J. Duchene
Keyword(s):  
Threshold Switching ◽  
Switching Devices

scholarly journals Improvement of NbO x -based threshold switching devices by implementing multilayer stacks

2019 ◽  
Vol 34 (7) ◽  
pp. 075005 ◽  
Author(s):  
Melanie Herzig ◽  
Martin Weiher ◽  
Alon Ascoli ◽  
Ronald Tetzlaff ◽  
Thomas Mikolajick ◽  
...  
Keyword(s):  
Threshold Switching ◽  
Multilayer Stacks ◽  
Switching Devices
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