An ultra-compact leaky integrate-and-fire neuron with long and tunable time constant utilizing pseudo resistors for spiking neural networks

Spiking neural networks (SNNs) inspired by biological neurons enable a more realistic mimicry of the human brain. To realize SNNs similar to large-scale biological networks, neuron circuits with high area efficiency are essential. In this paper, we propose a compact leaky integrate-and-fire (LIF) neuron circuit with a long and tunable time constant, which consists of a capacitor and two pseudo resistors (PRs). The prototype chip was fabricated with TSMC 65 nm CMOS technology, and it occupies a die area of 1392 m2. The fabricated LIF neuron has a power consumption of 6 W and a leak time constant of up to 1.2 ms (the resistance of PR is up to 600 MΩ). In addition, the time constants are tunable by changing the bias voltage of PRs. Overall, this proposed neuron circuit facilitates the very-large-scale integration (VLSI) of adaptive SNNs, which is crucial for the implementation of bio-scale brain-inspired computing.

Compact and Energy Efficient Neuron With Tunable Spiking Frequency in 22-nm FDSOI

In this paper, we present a mixed-signal integrate and fire neuron designed in a 22-nm FDSOI technology. In this novel design, we deploy the back-gate terminal of FDSOI technology for a tunable design. For the first time, we show analytically and with pre- and post-layout simulations a neuron with tunable spiking frequency using the back-gate voltage of FDSOI technology. The neuron circuit is designed in the sub-threshold region and dissipates an ultra-low energy per spike of the order of Femto Joules per spike. With the layout area of only 30um^2, this is the smallest neuron circuit reported to date.

Compact and Energy Efficient Neuron With Tunable Spiking Frequency in 22-nm FDSOI

In this paper, we present a mixed-signal integrate and fire neuron designed in a 22-nm FDSOI technology. In this novel design, we deploy the back-gate terminal of FDSOI technology for a tunable design. For the first time, we show analytically and with pre- and post-layout simulations a neuron with tunable spiking frequency using the back-gate voltage of FDSOI technology. The neuron circuit is designed in the sub-threshold region and dissipates an ultra-low energy per spike of the order of Femto Joules per spike. With the layout area of only 30um^2, this is the smallest neuron circuit reported to date.

Investigating the integrate and fire model as the limit of a random discharge model: a stochastic analysis perspective

In the mean field integrate-and-fire model, the dynamics of a typical neuron within a large network is modeled as a diffusion-jump stochastic process whose jump takes place once the voltage reaches a threshold. In this work, the main goal is to establish the convergence relationship between the regularized process and the original one where in the regularized process, the jump mechanism is replaced by a Poisson dynamic, and jump intensity within the classically forbidden domain goes to infinity as the regularization parameter vanishes. On the macroscopic level, the Fokker-Planck equation for the process with random discharges (i.e. Poisson jumps) are defined on the whole space, while the equation for the limit process is on the half space. However, with the iteration scheme, the difficulty due to the domain differences has been greatly mitigated and the convergence for the stochastic process and the firing rates can be established. Moreover, we find a polynomial-order convergence for the distribution by a re-normalization argument in probability theory. Finally, by numerical experiments, we quantitatively explore the rate and the asymptotic behavior of the convergence for both linear and nonlinear models.

Artificial Neurons Based on Ag/V2C/W Threshold Switching Memristors

Artificial synapses and neurons are two critical, fundamental bricks for constructing hardware neural networks. Owing to its high-density integration, outstanding nonlinearity, and modulated plasticity, memristors have attracted emerging attention on emulating biological synapses and neurons. However, fabricating a low-power and robust memristor-based artificial neuron without extra electrical components is still a challenge for brain-inspired systems. In this work, we demonstrate a single two-dimensional (2D) MXene(V2C)-based threshold switching (TS) memristor to emulate a leaky integrate-and-fire (LIF) neuron without auxiliary circuits, originating from the Ag diffusion-based filamentary mechanism. Moreover, our V2C-based artificial neurons faithfully achieve multiple neural functions including leaky integration, threshold-driven fire, self-relaxation, and linear strength-modulated spike frequency characteristics. This work demonstrates that three-atom-type MXene (e.g., V2C) memristors may provide an efficient method to construct the hardware neuromorphic computing systems.

Mapping input noise to escape noise in integrate-and-fire neurons: a level-crossing approach

Noise in spiking neurons is commonly modeled by a noisy input current or by generating output spikes stochastically with a voltage-dependent hazard rate (“escape noise”). While input noise lends itself to modeling biophysical noise processes, the phenomenological escape noise is mathematically more tractable. Using the level-crossing theory for differentiable Gaussian processes, we derive an approximate mapping between colored input noise and escape noise in leaky integrate-and-fire neurons. This mapping requires the first-passage-time (FPT) density of an overdamped Brownian particle driven by colored noise with respect to an arbitrarily moving boundary. Starting from the Wiener–Rice series for the FPT density, we apply the second-order decoupling approximation of Stratonovich to the case of moving boundaries and derive a simplified hazard-rate representation that is local in time and numerically efficient. This simplification requires the calculation of the non-stationary auto-correlation function of the level-crossing process: For exponentially correlated input noise (Ornstein–Uhlenbeck process), we obtain an exact formula for the zero-lag auto-correlation as a function of noise parameters, mean membrane potential and its speed, as well as an exponential approximation of the full auto-correlation function. The theory well predicts the FPT and interspike interval densities as well as the population activities obtained from simulations with colored input noise and time-dependent stimulus or boundary. The agreement with simulations is strongly enhanced across the sub- and suprathreshold firing regime compared to a first-order decoupling approximation that neglects correlations between level crossings. The second-order approximation also improves upon a previously proposed theory in the subthreshold regime. Depending on a simplicity-accuracy trade-off, all considered approximations represent useful mappings from colored input noise to escape noise, enabling progress in the theory of neuronal population dynamics.