Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing

2021 ◽  
Vol 130 (20) ◽  
pp. 203101
Author(s):  
Leonardo Cancellara ◽  
Toni Markurt ◽  
Tobias Schulz ◽  
Martin Albrecht ◽  
Sylvia Hagedorn ◽  
...  
Keyword(s):  
High Temperature ◽  
Oxygen Diffusion ◽  
High Temperature Annealing ◽  
Dislocation Reduction

scholarly journals Alkali doping of graphene: The crucial role of high-temperature annealing

2016 ◽  
Vol 94 (20) ◽  
Author(s):  
A. Khademi ◽  
E. Sajadi ◽  
P. Dosanjh ◽  
D. A. Bonn ◽  
J. A. Folk ◽  
...  
Keyword(s):  
High Temperature ◽  
Crucial Role ◽  
High Temperature Annealing ◽  
Alkali Doping

Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

2014 ◽  
Author(s):  
A. Vinattieri ◽  
F. Batignani ◽  
F. Bogani ◽  
M. Meneghini ◽  
G. Meneghesso ◽  
...  
Keyword(s):  
High Temperature ◽  
Capture Efficiency ◽  
High Temperature Annealing ◽  
Carrier Capture

Defect reduction in oxygen implanted silicon-on-insulator material during high-temperature annealing

1989 ◽  
Vol 47 ◽  
pp. 604-605
Author(s):  
P. Roitman ◽  
B. Cordts ◽  
S. Visitserngtrakul ◽  
S.J. Krause
Keyword(s):  
High Temperature ◽  
Annealing Temperature ◽  
Silicon On Insulator ◽  
High Dose ◽  
High Temperature Annealing ◽  
High Current ◽  
Defect Reduction ◽  
Annealing Step ◽  
Multiple Cycle ◽  
Defect Densities

Synthesis of a thin, buried dielectric layer to form a silicon-on-insulator (SOI) material by high dose oxygen implantation (SIMOX – Separation by IMplanted Oxygen) is becoming an important technology due to the advent of high current (200 mA) oxygen implanters. Recently, reductions in defect densities from 109 cm−2 down to 107 cm−2 or less have been reported. They were achieved with a final high temperature annealing step (1300°C – 1400°C) in conjunction with: a) high temperature implantation or; b) channeling implantation or; c) multiple cycle implantation. However, the processes and conditions for reduction and elimination of precipitates and defects during high temperature annealing are not well understood. In this work we have studied the effect of annealing temperature on defect and precipitate reduction for SIMOX samples which were processed first with high temperature, high current implantation followed by high temperature annealing.

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