scholarly journals Alkali doping of graphene: The crucial role of high-temperature annealing

2016 ◽  
Vol 94 (20) ◽  
Author(s):  
A. Khademi ◽  
E. Sajadi ◽  
P. Dosanjh ◽  
D. A. Bonn ◽  
J. A. Folk ◽  
...  
Keyword(s):  
High Temperature ◽  
Crucial Role ◽  
High Temperature Annealing ◽  
Alkali Doping

Role of oxygen diffusion in the dislocation reduction of epitaxial AlN on sapphire during high-temperature annealing

2021 ◽  
Vol 130 (20) ◽  
pp. 203101
Author(s):  
Leonardo Cancellara ◽  
Toni Markurt ◽  
Tobias Schulz ◽  
Martin Albrecht ◽  
Sylvia Hagedorn ◽  
...  
Keyword(s):  
High Temperature ◽  
Oxygen Diffusion ◽  
High Temperature Annealing ◽  
Dislocation Reduction

Carrier capture efficiency in InGaN/GaN LEDs: Role of high temperature annealing

2014 ◽  
Author(s):  
A. Vinattieri ◽  
F. Batignani ◽  
F. Bogani ◽  
M. Meneghini ◽  
G. Meneghesso ◽  
...  
Keyword(s):  
High Temperature ◽  
Capture Efficiency ◽  
High Temperature Annealing ◽  
Carrier Capture

scholarly journals Double Step Annealing for the Recovering of Ion Implantation Defectiveness in 4H-SiC DIMOSFET

2018 ◽  
Vol 924 ◽  
pp. 357-360
Author(s):  
Massimo Zimbone ◽  
Nicolò Piluso ◽  
Grazia Litrico ◽  
Roberta Nipoti ◽  
Riccardo Reitano ◽  
...  
Keyword(s):  
High Temperature ◽  
Ion Implantation ◽  
Thermal Annealing ◽  
Crucial Role ◽  
The Body ◽  
Crystal Quality ◽  
High Temperature Annealing ◽  
Double Step ◽  
Lower Temperature ◽  
P Type

Thermal annealing plays a crucial role for healing the defectiveness in the ion implanted regions of DIMOSFETs (Double Implanted MOSFETs) devices. In this work, we have studied the effect of a double step annealing on the body (Al implanted) and the source (P implanted) regions of such devices. We found that a high temperature annealing (1750°C, 1h) followed by a lower temperature one (1500°C, 4h) is mandatory to achieve low defects concentration and good crystal quality in both the n-and p-type zones of the device.

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