The role of the sequence of plasma treatment and high temperature annealing on solution-processed a-IMZO thin film transistor

2019 ◽  
Vol 793 ◽  
pp. 369-374 ◽  
Author(s):  
Jin Cheng ◽  
Xuyang Li ◽  
Jian Guo ◽  
Haifei Xu ◽  
Yonghua Chen ◽  
...  
Keyword(s):  
Thin Film ◽  
High Temperature ◽  
Plasma Treatment ◽  
Thin Film Transistor ◽  
High Temperature Annealing ◽  
Solution Processed

Morphology of α-hexathienyl thin-film-transistor films

1995 ◽  
Vol 10 (11) ◽  
pp. 2958-2962 ◽  
Author(s):  
A.J. Lovinger ◽  
D.D. Davis ◽  
R. Ruel ◽  
L. Torsi ◽  
A. Dodabalapur ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Temperature ◽  
Electron Diffraction ◽  
Thin Film Transistor ◽  
High Temperature Annealing ◽  
Atomic Force ◽  
Normal Orientation ◽  
Electronic Performance ◽  
High Temperature Polymorph

We have studied the morphology of thin films of α-hexathienyl (α-6T), a hexamer of thiophene that is a very promising material for thin-film-transistor applications. Using electron- and atomic-force microscopies, we found that on both rigid (Si/SiO2 and glass) and flexible (polyimide) substrates, evaporated films show an apparently random, polycrystalline morphology. The crystals are lamellar, ca. 100-200 nm in lateral dimensions and 15-30 nm in thickness, and exhibit irregular boundaries. Nevertheless, electron-diffraction evidence from such films indicates that the constituent molecules are deposited preferentially end-on and assume a normal or nearly normal orientation with respect to their substrates. Rapid high-temperature annealing causes growth of much larger (μm-sized) crystalline grains and a partial transformation to a high-temperature polymorph; however, this process leads to formation of gaps in the film, which may cause deterioration of electronic performance.

Highly Stable, Solution‐Processed Ga‐Doped IZTO Thin Film Transistor by Ar/O 2 Plasma Treatment

2019 ◽  
Vol 5 (12) ◽  
pp. 1900768 ◽  
Author(s):  
Narendra Naik Mude ◽  
Ravindra Naik Bukke ◽  
Jewel Kumer Saha ◽  
Christophe Avis ◽  
Jin Jang
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistor ◽  
Stable Solution ◽  
Solution Processed

Role of in-situ hydrogen plasma treatment on gate bias stability and performance of a-IGZO thin-film transistors

2021 ◽  
Author(s):  
Om Kumar Prasad ◽  
Srikant Kumar Mohanty ◽  
ChienHung Wu ◽  
Tsung Ying Yu ◽  
K-M Chang
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Hydrogen Plasma ◽  
Gate Bias ◽  
Bias Stability ◽  
And Performance

scholarly journals Tuning the electrical performance and bias stability of a semiconducting SWCNT thin film transistor with an atomic layer deposited AlZrOx composite

RSC Advances ◽  
2017 ◽  
Vol 7 (83) ◽  
pp. 52517-52523 ◽  
Author(s):  
Jun Li ◽  
Chuan-Xin Huang ◽  
Jian-Hua Zhang
Keyword(s):  
Thin Film ◽  
Carbon Nanotube ◽  
Thin Film Transistors ◽  
Thin Film Transistor ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Solution Processed ◽  
Single Walled Carbon Nanotube ◽  
Single Walled Carbon ◽  
Bias Stability

Solution-processed semiconducting single-walled carbon nanotube (s-SWCNT) thin film transistors (TFTs) based on different atomic layer deposited AlZrOx insulators are fabricated and characterized.

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