Unveiling the ambipolar carrier transport property of SnO2−X for multiple-functional interlayers in perovskite solar cells

2021 ◽  
Vol 119 (12) ◽  
pp. 123501
Author(s):  
Zhenyi Ni ◽  
Zhenhua Yu ◽  
Jinsong Huang
Author(s):  
Yukinori Morita ◽  
Hiroyuki OTA ◽  
Shinji MIGITA

Abstract Carrier transport properties of ferroelectric Hf0.5Zr0.5O2 (HZO) thin films have been investigated on metal-ferroelectric-metal (MFM) capacitor in the first current flow of ferroelectric poling treatment. In current–voltage (I–V) measurement of MFM capacitor, a kink or discontinuity point of derivative in I–V characteristic appears, and after the cyclic voltage sweep this kink disappears. This phenomenon is different from the ferroelectric instabilities after several thousand or million voltage cycle applies reported as the wake-up and fatigue. From the analysis using Poole-Frenkel plot of I–V characteristics, it is suggested that irreversible trap generation by electric field apply occurs in poling treatment.


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