Fine structure in electronic transitions attributed to nitrogen donor in silicon carbide

2021 ◽  
Vol 119 (26) ◽  
pp. 262101
Author(s):  
N. Assmann ◽  
C. Persson ◽  
A. Yu. Kuznetsov ◽  
E. V. Monakhov
Keyword(s):  
Silicon Carbide ◽  
Fine Structure ◽  
Electronic Transitions ◽  
Nitrogen Donor

Electronic transitions of the phosphorus-donor in 4H- and 6H-silicon carbide investigated by FTIR-transmission spectroscopy

2002 ◽  
Vol 324 (1-4) ◽  
pp. 49-52 ◽  
Author(s):  
H Heissenstein ◽  
H Sadowski ◽  
R Helbig
Keyword(s):  
Silicon Carbide ◽  
Electronic Transitions ◽  
Transmission Spectroscopy

The experimental electronic and vibrational spectra of fulvene

1970 ◽  
Vol 23 (9) ◽  
pp. 1707 ◽  
Author(s):  
RD Brown ◽  
PJ Domaille ◽  
JE Kent
Keyword(s):  
Absorption Spectrum ◽  
Fine Structure ◽  
Gas Phase ◽  
Energy Transition ◽  
Liquid Nitrogen Temperature ◽  
Electronic Transitions ◽  
Mo Calculations ◽  
Polycrystalline Layer ◽  
Partial Analysis ◽  
Electronic And Vibrational Spectra

The infrared spectrum of fulvene has been observed from 250 to 4000 cm-1 in the gas phase, and as a glass and a polycrystalline layer at liquid nitrogen temperature. On the basis of gas-phase contours and P-R separations 14 of the 30 fundamental vibrations have been assigned. The electronic absorption spectrum of fulvene has been recorded from 400 to 167 nm in the gas phase and four electronic transitions have been identified. The lowest-energy transition was found to be broad and structureless while the three higher-energy transitions showed an extensive vibrational fine structure. The electronic transitions have been tentatively assigned on the basis of VESCF-MO calculations and a partial analysis of the vibronic structure has bees made.

Local structure of silicon films and silicon carbide by surface extended energy loss fine structure

1985 ◽  
Vol 3 (3) ◽  
pp. 1309-1311 ◽  
Author(s):  
C. Natarajan ◽  
P. B. Abel ◽  
R. W. Hoffman
Keyword(s):  
Silicon Carbide ◽  
Fine Structure ◽  
Energy Loss ◽  
Local Structure ◽  
Silicon Films

Abstract: High-Energy Fine Structure in the Auger Spectra of Silicon and Silicon Carbide

1973 ◽  
Vol 10 (1) ◽  
pp. 276-276 ◽  
Author(s):  
J. E. Rowe ◽  
S. B. Christman
Keyword(s):  
Silicon Carbide ◽  
Fine Structure ◽  
High Energy ◽  
Auger Spectra

scholarly journals All-Optical dc Nanotesla Magnetometry Using Silicon Vacancy Fine Structure in Isotopically Purified Silicon Carbide

2016 ◽  
Vol 6 (3) ◽  
Author(s):  
D. Simin ◽  
V. A. Soltamov ◽  
A. V. Poshakinskiy ◽  
A. N. Anisimov ◽  
R. A. Babunts ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Fine Structure ◽  
Silicon Vacancy ◽  
All Optical

IR-Absorption Spectra of Impurities in 6H-SiC

1994 ◽  
Vol 339 ◽  
Author(s):  
F. Engelbrecht ◽  
R. Helbig
Keyword(s):  
Temperature Dependence ◽  
Excited States ◽  
Oscillator Strengths ◽  
Electronic Transitions ◽  
Ir Absorption ◽  
Orbit Splitting ◽  
Ir Absorption Spectra ◽  
Nitrogen Donor ◽  
Splitting Energy ◽  
Vibronic Transitions

ABSTRACTWe performed infrared absorption and reflectivity measurements on serverai 6H-SiC samples at variable temperatures between T=5K and T=300K. From the temperature dependence of the observed absorption lines we separated electronic from vibronic transitions. The electronic transitions are assumed to be due to transitions from the neutral nitrogen donor occupying the three different carbon lattice sites in 6H-SiC into excited states. We determined polarization and the oscillator strengths of these transitions. From the temperature dependence of the electronic transitions we determined the valley-orbit-splitting energy and we demonstrated the influence of compensation. For the different vibronic transitions we determined the Grüneisen constants.

Multiple Bound Exciton Associated with the Nitrogen Donor in 3C Silicon Carbide

1998 ◽  
Vol 210 (2) ◽  
pp. 407-413 ◽  
Author(s):  
J.P. Bergman ◽  
E. Janz�n ◽  
W.J. Choyke
Keyword(s):  
Silicon Carbide ◽  
Nitrogen Donor
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