Characterization of PN junctions of doped Mott insulators

ABSTRACTA novel immersion scanning technique for making microporous silicon has been successfully applied to blank and lithographically patterned Si substrates. The advantages of the method lie in its simplicity, speed and adaptability to large and odd-size substrates. The photoluminescence (PL) spectra of microporous Si show a continuous decrease in intensity between 200K and 2K, but are fully reversible. Thermal desorption spectroscopy on microporous Si shows a classic hydrogen desorption spectrum which coincides with a quenching of the PL intensity. Under constant excitation, a degradation of PL Intensity occurs in oxygen and wet nitrogen but is only partially reversible in dry N2. Microporous Si PN junctions exhibiting normal I-V characteristics have been successfully fabricated with standard Si VLSI processes. Visible light emission under forward bias is detected which increases linearly In Intensity with Input current. This is the first observation of electroluminescence in the visible region from microporous SI PN junctions.

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Characterization of Si pn junctions fabricated by direct wafer bonding in ultra-high vacuum

Applied Physics Letters ◽

10.1063/1.120975 ◽

1998 ◽

Vol 72 (9) ◽

pp. 1095-1097 ◽

Cited By ~ 27

Author(s):

K. D. Hobart ◽

M. E. Twigg ◽

F. J. Kub ◽

C. A. Desmond

Keyword(s):

Wafer Bonding ◽

High Vacuum ◽

Ultra High Vacuum ◽

Direct Wafer Bonding ◽

Pn Junctions

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Characterization of Traps in GaN pn Junctions Grown by MOCVD on GaN Substrate Using Deep-Level Transient Spectroscopy

Materials Science Forum ◽

10.4028/www.scientific.net/msf.600-603.1297 ◽

2008 ◽

Vol 600-603 ◽

pp. 1297-1300 ◽

Cited By ~ 1

Author(s):

Yutaka Tokuda ◽

Youichi Matsuoka ◽

Hiroyuki Ueda ◽

Osamu Ishiguro ◽

Narumasa Soejima ◽

...

Keyword(s):

Deep Level Transient Spectroscopy ◽

Minority Carrier ◽

Deep Level ◽

Electron Traps ◽

Majority Carrier ◽

Sapphire Substrates ◽

Carrier Traps ◽

Pn Junctions ◽

Transient Spectroscopy

Minority- and majority-carrier traps were studied in GaN pn junctions grown homoepitaxially by MOCVD on n+ GaN substrates. Two majority-carrier traps (MA1,MA2) and three minority-carrier traps (MI1, MI2, MI3) were detected by deep-level transient spectroscopy. MA1 and MA2 are electron traps commonly observed in n GaN on n+ GaN and sapphire substrates. No dislocation-related traps were observed in n GaN on n+ GaN. Among five traps in GaN pn on GaN, MI3 is the main trap with the concentration of 2.5x1015 cm-3.

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